Study of the effects of different fractions of large grains of μc-Si:H:F films on the infrared absorption on thin film solar cells

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

“…2 it also is observed that pm-Ge:H,B films have a larger V d values (up to 1.7 Å/s) than those of a-Ge:H,B films (up to 1.2 Å/s). This result is in agreement with those observed by AFM and HRTEM characterization; since larger V d is associated to larger crystalline fractions in polymorphous/microcrystalline films [17]. The reason of that, is related to the fact that at larger V d (optimized by the deposition parameters, as pressure and H 2 dilution), oxygen incorporation in the film is reduced, and the formation of nanocrystals in the plasma is improved [17].…”

Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures

“…Those crystals are of different orientations and grown in columns which are separated by an amorphous phase. Usually μc-Si:H films are grown from SiH 4 and H 2 gas mixtures, but also SiF 4 , H 2 , and Ar mixtures have been used [39]. The main parameters to grow μc-Si:H films are high H 2 dilution, moderated RF power, and high deposition pressure; according to the optimization of these parameters, the crystalline fraction can increase (Xc) and also its performance characteristics can be optimized.…”

“…For thin-film solar cell applications, μc-Si:H also has been extensively studied due to its larger IR absorption than that of a-Si:H [39] and also larger stability against sun radiation (light soaking). At the present time, a-Si:H/μc-Si:H tandem solar cells (micromorph solar cells) have been developed with stabilized efficiencies up to 12% [9].…”

Multilayered structuring of thin-film PV modules by ultrafast laser ablation

“…Because of indirect band gap problems, thin-film PV modules, such as Si-based solar cells, are currently inefficient for absorbing incident sunlight [1]. Recent studies have shown that thin-film PV modules based on CuIn x Ga (1Àx) Se 2 (CIGS) semiconductor materials are a potentially efficient energy-conversion technology [2][3][4].…”

“…shows a schematic of the Gaussian pulse profile for scribing thin-film layers based on Eqs (1). and(2), where F 0 = 0.316, 0.406, and 0.508 J/cm 2 .…”