2007
DOI: 10.1016/j.apsusc.2007.04.052
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Study of the effects of an adatom Sn on the Cu surface electromigration using a first principles method

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Cited by 9 publications
(8 citation statements)
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References 41 publications
(41 reference statements)
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“…On the clean Cu(111) surface, the Cu adatom diffuses with a small energy barrier of 0.068 eV, in good agreement with a previous theoretical value of 0.07 eV. 38 By coating the Cu(111) surface with graphene or h-BN layers, the diffuse energy barrier of Cu adatoms increases about 2-3 times, compared with that on the clean Cu(111) surface. These results indicate that graphene or h-BN coating layers inhibit the movement of Cu adatoms on Cu surfaces.…”
Section: Suppression Of Conductivity Deterioration Of Copper Thin Filsupporting
confidence: 89%
“…On the clean Cu(111) surface, the Cu adatom diffuses with a small energy barrier of 0.068 eV, in good agreement with a previous theoretical value of 0.07 eV. 38 By coating the Cu(111) surface with graphene or h-BN layers, the diffuse energy barrier of Cu adatoms increases about 2-3 times, compared with that on the clean Cu(111) surface. These results indicate that graphene or h-BN coating layers inhibit the movement of Cu adatoms on Cu surfaces.…”
Section: Suppression Of Conductivity Deterioration Of Copper Thin Filsupporting
confidence: 89%
“…6. Our result indicates that the Sn atom adsorbs on 20 Their result shows that the H 1 site is the most energetically favorable. Despite the H 2 site being less energetically favorable, the difference of adsorption energies between the two sites is only 28 meV.…”
Section: The Lc Phasementioning
confidence: 56%
“…The preceding calculation predicted that adsorption of the Sn atom on Cu(111) favors the H 1 site over the H 2 site, but the energy difference between the two is small (28 meV). 20 As mentioned previously, the Sn atom is roughly 10% larger than the Cu atom. When the Sn coverage increases, the Sn atoms likely approach so near each other that the interaction between these Sn atoms makes it energetically unfavored for both Sn atoms to occupy the H 1 sites in each unit cell.…”
Section: The Hc Phasementioning
confidence: 68%
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“…The structure determines the property, and the surface structure affects the process of surface adsorption and dissociation. The vacancy, substitution, doping, and defect are all typical types of surface structure, in which the surface‐doped elements are an important dissociated affecting factor because they could penetrate the substrate actively, change the surface activity, and affect the binding of adsorbate on the surface 11–13 . From this point of view, it can be considered that the dissociation of O 2 can be steered by the surface structure 14 .…”
Section: Introductionmentioning
confidence: 99%