Study of the electronic and optical bonding properties of doped SnO2

Tsai

Electrochem. Solid-State Lett.

et al. 2012

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. But silicon oxide cannot be used as resistance random access memory (RRAM) due to its native electrical properties. In this work, based on the concept of inducing defect by metal doping into insulator, silicon oxide with a few tin dopants at room temperature can successfully be used as switching layer in RRAM. According to electrical analyses, the current transport mechanism in Sn-doped silicon oxide is governed by Pool-Frenkel emission, which demonstrates the conduction path in the RRAM guided by Sn doping induced defect.Recently, the increasing demands for portable electronic products, nonvolatile memory has been widely applied as information storage device due to its low power consumption properties. Modern semiconductor nonvolatile memories are scaled constantly to achieve large capacity while device features approach the sub-100-nm regime. Nevertheless, for conventional charge storage-based memories, 1-4 the increasing demand for device densities by scaling dimension is expected to be a major challenge due to the technical and physical limitation. To overcome the issue, alternative memory technologies have been widely investigated, including a magnetic random access memory (MRAM), a phase change random access memory (PCRAM), a polymer random access memory (PRAM), and a resistive random access memory (RRAM). Among these memories, RRAM composed of an insulating layer sandwiched by two electrodes is a great potential candidate for next-generation nonvolatile memory due to their superior properties such as low cost, simple structure, fast operation speed, and nondestructive readout. 5,6 Various materials have been reported to possess resistive switching behaviors, such as perovskite oxides (PrCaMnO 3 , SrZrO 3 ), 7, 8 transition metal oxides (NiO, ZnO, CrO, CoO), 9-12 and organic material. 13 In addition, many switching mechanism of RRAM have been proposed to explain resistive switching phenomenon, such as conductive filaments, 14 valence change, 15 and schottky barrier. 16 However, the underlying mechanism of resistive switching behavior is still not yet understood clearly. Silicon-based oxide is a promising material for RRAM applications because of its great compatibility in metal oxide semiconductor (CMOS) process. Therefore, the research using silicon-based oxide as the resistance-switching layer was worthy of investigation. Kozicki et al. 17 have studied the resistive switching characteristics of Cu/SiO 2 /W structure. They utilized high temperature treatment at 610 • C to drive Cu into SiO 2 to form filament and to result in resistive switching behavior. However, the high driving temperature is not suitable to the backend of line (BEOL) process for CMOS integration technology.In this work, tin metal doped into silicon oxide by co-sputtering at room temperature was taken as the resistance switching layer of RRAM. To evaluate the resistive switching properties of tin-doped silico...

mentioning

confidence: 92%

The Effect of Silicon Oxide Based RRAM with Tin Doping

Tsai

Electrochem. Solid-State Lett.

et al. 2012

Applied Physics Letters

“…16,17 Some other studies addressed other peaks at 1284 and 2080 cm −1 for Sn-OH and Sn-O-Sn vibration modes, respectively, [16][17][18] and analyzed peaks at 690 and 770 cm −1 contributed by O-Sn-O and Sn-O-Sn bonds. 19 This work also demonstrates a variation in the Sn-O bond at 572 cm −1 by changing the annealing recipe. Figure 6 shows the Sn-O band related absorption peak of the as-deposited and 450°C annealed ITO films with different annealing times.…”

Section: Nanograin Crystalline Transformation Enhanced Uv Transparencmentioning

confidence: 92%

Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film

Hsu

Pai

Meng

et al. 2009

“…Sua condutividade elétrica está associada a valência variável do átomo de estanho, que cria defeitos pontuais podendo atuar como doadores ou aceitadores de elétrons. A interação de gases com a superfície do SnO 2 pode ainda levar a mudanças na valência deste, além de influenciar na quantidade de espécies gasosas adsorvidas [6].…”

Section: Introductionunclassified

Caracterização elétrica de blocos varistores à base de SnO2

Brito¹,

Pessoa²,

Vasconcelos³

et al. 2012

Cerâmica

Neste trabalho foi realizado um estudo das propriedades elétricas de blocos varistores à base de SnO2. Foram avaliadas a não linearidade destas cerâmicas por meio da caracterização tensão-corrente, bem como a altura, largura e os portadores de cargas por espectroscopia de impedância, além das energias de ativação. Os valores de α foram relativamente baixos sendo o maior valor de 6,3 para o sistema 98,65%SnO2.1,00%Co2O3.0,05%Nb2O5.0,05%Cr2O3.0,25%Pr2O3 (SCNCrPr). O sistema 98,65%SnO2.1,00%Co2O3.0,05%Nb2O5. 0,05%Cr2O3.0,25%La2O3 (SCNCrLa) apesar de apresentar um tamanho médio de grão pequeno 1,66 μm, possuiu um valor muito baixo de Er, o que pode está associado a não formação de barreiras efetivas na região de contorno de grão, gerando uma corrente de fuga elevada da ordem de 230 μA.