Study of the Gate-Sensing and Channel-Sensing Transient Analysis Method for Monitoring the Charge Vertical Location of SONOS-Type Devices

Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao‐Yuan; Hsieh, Kuang-Yeu; Liu, R.; Lu, Chih‐Yuan

doi:10.1109/tdmr.2007.907290

Cited by 8 publications

(1 citation statement)

References 5 publications

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“…The trapped charge centroid location was estimated from the transient analysis method [40][41][42][43], which transforms the V FB versus t p E/W or W/E transitions to a J TRANS versus E TO relationship. J TRANS is the transient current which develops during the W/E or the E/W transition and it is given by:…”

Section: Transient Analysis Methodsmentioning

confidence: 99%

Inert ambient annealing effect on MANOS capacitor memory characteristics

et al. 2015

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In this work we report on the influence of nitrogen ambient thermal effects on the performance of Pt/Al2O3/Si3N4/SiO2/Si memory capacitors. Two post deposition annealing (PDA) furnace steps were employed, at 850 and 1050 °C both for 15 min. The alumina films were deposited by atomic layer deposition using TMA/H2O at 250 °C. The structural characteristics of the stacks were evaluated by transmission electron microscopy and x-ray reflectivity measurements. The memory performance of the stacks was evaluated by write/erase and erase/write measurements, endurance and retention testing. It was found that in as-deposited state the Al2O3 layer is defective resulting in strong leakage currents, controlled by deep defects states. Thus, this behavior inhibits the memory functionality of the stacks. PDA crystallizes and condenses the Al2O3 transforming the layer from amorphous to polycrystalline. During this transformation the Al2O3 electrical quality improves greatly indicating that a significant number of these deep defects have been removed during annealing. Physical reasoning implies that the most plausible origin of these deep defects is hydrogen. However, the polycrystalline Al2O3 films showed inferior retention characteristics which are attributed to grain boundary related shallow defects. The findings of this work could pave the way for more efficient annealing schemes, in which an important factor is the time interval for hydrogen out-diffusion from the Al2O3 layer.

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Section: Transient Analysis Methodsmentioning

confidence: 99%

Inert ambient annealing effect on MANOS capacitor memory characteristics

et al. 2015

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Study of gate-injection operated SONOS-type devices using the gate-sensing and channel-sensing (GSCS) method

Lue

Wang

et al. 2009

2009 IEEE International Reliability Physics Symposium

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SONOS devices using gate injection programming and erasing have better cycling endurance because the gate oxide is not stressed by P/E operations. This work studies the gate injection behavior in detail using the recently developed gatesensing and channel-sensing (GSCS) technique. GSCS accurately locates the charge centroid during programming/erasing and reliability tests. For the first time, we can track the charge centroid for gate-injection "top BE-SONOS" and various SONOS-type devices. Our results indicate that the charge centroid after electron gate injection is close to the nitride center, irrespective of various nitride thickness and top dielectric. Moreover, there is electron and hole vertical mismatch after hole gate injection. Comparing the results from SONS, we can clearly prove that electrons are mainly distributed inside the bulk nitride instead of the interfaces between oxide and nitride. For SNOS and SNS, where there is electron and hole injection simultaneously, two-region approximation can give us more detailed information about electron and hole capture. By comparing experimental data with theoretical modeling, we have shown that nitride 7nm or thicker captures all the injected electrons up to total charge area density ~ 10 13 cm -2 .

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