Study of the growth and stability of ultra-thin films of Au deposited on Si(100) and Si(111)

Kim, J.H.; Yang, Guifu; Yang, Sejung; Weiss, A. H.

doi:10.1016/s0039-6028(00)01059-1

Cited by 21 publications

(21 citation statements)

References 18 publications

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“…There are quite similar reports so far. Kim et al [20] reported the ratio of Au/Si about 1.5 derived by electron-induced Auger electron spectroscopy. Low energy ion scattering analysis [18] also estimated the Au concentration to be about 60%.…”

Section: Meis Analysismentioning

confidence: 99%

“…Such an intriguing property has attracted much attention in terms of the electronic properties dependent on the size and shape of gold particles [7,8]. For the Au/Si grown at RT, there are tremendous papers on the atomic and electronic structures [1][2][3][4][5][9][10][11][12][13][14][15][16][17][18][19][20]. In spite of such many efforts, the phase and electronic structure together with the kinetic behavior are still debatable issues.…”

Section: Introductionmentioning

confidence: 99%

“…They interpreted the higher binding energy shifts of Au 4f at small Au coverages were responsible for the core hole created during photoemission so called final state effect. Recently, Kim et al [20] analyzed Au/Si(1 1 1) and Au/Si(0 0 1) systems by positronannihilation-and electron-induced Auger electrons spectroscopy and claimed that Au-Si intermixing took place with variable composition at Au coverage from 0.5 to 3 ML and an Au/Au x Si 1Àx /Si structure was formed at Au coverage above 3 ML.…”

Section: Introductionmentioning

confidence: 99%

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The structure and growth process of Au/Si(111) analyzed by high-resolution ion scattering coupled with photoelectron spectroscopy

et al. 2008

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Section: Meis Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The structure and growth process of Au/Si(111) analyzed by high-resolution ion scattering coupled with photoelectron spectroscopy

et al. 2008

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“…Moreover, Kim al. [24] proposed a structural model, indicating the arrangement of atoms in the layers as they are deposited. The proposed model shows that at the interface between the deposited material and the substrate, the system Au/Si tends to reach the concentration of a 50-50 of compound Au-Si.…”

Section: Resultsmentioning

confidence: 99%

Room temperature evolution of gold nanodots deposited on silicon

et al. 2014

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In this work, the morphological and structural evolution of gold nanodots deposited on Si substrates has been monitored for 2.4×10 3 h. Gold nanodots on Si are of great scientific interest because they can be used in numerous ways, for example as subwavelength antennas in plasmonics, as electrical contacts in nanometric devices, or as catalysts for the formation of quasi-1dimensional nanostructures. Their characteristics have been studied in a very large number of papers in literature, and among the several aspects, it is known that continuous Au films peculiarly interact with Si by interdiffusion even at room temperature. It would be expected that also small nanostructures could undergo to an interdiffusion and consequent modifications of their structure and shape after aging. Despite the cruciality of this topic, no literature papers have been found showing a detailed morphological and structural characterization of aged Au nanodots. Au nanoparticles have been deposited by sputtering on Si and stored in air at temperature between 20 and 23°C and humidity of about 45 %, simulating the standard storage conditions of most of the fabrication labs. The morphological and structural characterizations have been performed by bright field transmission electron microscopy (TEM). A specific procedure has been used in order to avoid any modification of the material during the specimen preparation for the TEM analysis. A digital processing of the TEM images has allowed to get a large statistical analysis on the particles size distribution. Two different types of nanoparticles are found after the deposition: pure gold crystalline nanodots on the Si surface and gold amorphous nanoclusters interdiffused into the Si subsurface regions. While the nanodots preserve both morphology and structure all over the time, the amorphous agglomerates show an evolution during aging in morphology, structure, and chemical phase.

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“…In particular, as a result of the strong interaction between silicon and gold, the mixing diffusion of the two species at the nanoscale level can occur even at room temperature. Such interaction was studied in detail by experimental methods [3][4][5][6][7][8] and attempts of such investigations by computer simulation methods were undertaken [9][10][11][12]. These studies showed the possibility of forming eutectic phases at the boundary between gold and silicon as a result of heating.…”

Section: Introductionmentioning

confidence: 99%

Structure of the interlayer between Au thin film and Si-substrate: Molecular Dynamics simulations

Plechystyy

Shtablavyi

Winczewski

et al. 2020

Mater. Res. Express

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Interaction between 2, 3, 5 and 7 atomic layers of gold and a (111) silicon surface was investigated with the molecular dynamics simulation method. The simulation of the diffusion interaction between gold and silicon in the temperature range 425-925 K has been carried out. The peculiarities of the concentration changes of the interacting components and the atomic density at the boundary of two phases in the direction perpendicular to the crystalline surface were established. By means the formalism of quasi two dimensional partial pair correlation functions the atomic structure of the diffusion region was analyzed. The formation of the alloy of eutectic composition within the goldsilicon interlayer was established. It was shown that the inter-phase mixing in various temperature intervals occurred according to different diffusion mechanisms.

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Study of the growth and stability of ultra-thin films of Au deposited on Si(100) and Si(111)

Cited by 21 publications

References 18 publications

The structure and growth process of Au/Si(111) analyzed by high-resolution ion scattering coupled with photoelectron spectroscopy

The structure and growth process of Au/Si(111) analyzed by high-resolution ion scattering coupled with photoelectron spectroscopy

Room temperature evolution of gold nanodots deposited on silicon

Structure of the interlayer between Au thin film and Si-substrate: Molecular Dynamics simulations

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