Study of the I–V characteristics of SnO2:F/AgInS2 (p)/Al Schottky diodes

Aissa, Z.; Bouzidi, A.; Amlouk, M.

doi:10.1016/j.jallcom.2010.07.053

Cited by 14 publications

(4 citation statements)

References 13 publications

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“…The current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of these devices have been extensively studied and reported in the literature for more than four decades because of simplicity in the fabrication [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. In these devices, different current-transport mechanisms may dominate the others at a certain temperature and voltage regions, such as thermionic emission (TE), thermionicfield emission (TFE), field emission (FE), recombination tunneling via interface states or dislocations, minority carrier injection, recombination and multi-step tunneling.…”

Section: Introductionmentioning

confidence: 99%

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Uslu

Altındal

Polat

et al. 2011

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

Uslu

Altındal

Polat

et al. 2011

Journal of Alloys and Compounds

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“…The ternary semiconductors with the chemical formula of AB n C m (A=Cu, Ag, Zn, Cd, B=Ga, In, C=S, Se, Te, n, m: integers) have aroused considerable interest [1][2][3]. Their physicochemical properties allow them to be used in many applications in fields such as solar cells [3][4][5], photocatalysis [6], non-linear optics [7], lasers [8], solar cells, optronic devices [9], etc. A particular type of the ternary chalcogenides has emerged, which has proven the ability of these semiconductors to be used as an absorber in terrestrial photovoltaic applications.…”

Section: Introduction Imentioning

confidence: 99%

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Nasrallah

Mahboub

Jemai³

et al. 2019

Eng. Technol. Appl. Sci. Res.

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In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2 and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts.

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“…In recent years, IeIIIeVI semiconductor nanocrystals, such as CuInS 2 , CuInSe 2 and AgInS 2 , have attracted particularly attention in an effort to replace commonly available NCs which contain toxic elements, due to their outstanding electro-optical properties, lowtoxic and promising applications in a wide range of fields such as biological imagings [1], solar cells [2,3], light-emitting devices [4,5], and nonlinear optics [6].…”

Section: Introductionmentioning

confidence: 99%