Study of the influence of annealing on the properties of CBD-CdS thin films

Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

“…The binding energies of Cd3d3/2 and Cd3d5/2 for the as-deposited sample are 411.8 eV and 405.0 eV, respectively, which are very close to that for the annealed one. The binding energy of Cd3d5/2 can be attributed to the Cd 2+ bonding state, which is in agreement with the previous report [14].…”

“…The binding energies of O1s are 531.0 eV, 529.71 eV, 529.05 eV and 531.38 eV, 529.71 eV, 529.53 eV for the as-deposited and annealed thin films, respectively. The peaks at 529.05 eV and 529.53 eV correspond to the binding energy O 2À 1s from CdO, while the peaks at 529.71 eV correspond to the binding energy O 2À 1s from In 2 O 3 [14]. According to the previous report [16], the O1s spectra contain two states called oxygen-deficient and oxygen-sufficient states.…”

CdS thin films prepared by laser assisted chemical bath deposition

“…It belongs to groups II-VI semiconductor having a wide bandgap of 2.4 eV, therefore is extensively studied in many optoelectronic devices such as solar cells, field effect transistors [3], photodetectors [4], and light emitting diodes [5]. CdS thin films were prepared by various methods such as sputtering [6], electrochemical deposition [7], vacuum deposition [8] and chemical bath deposition (CBD) [9][10][11][12][13][14]. Among all the techniques, CBD, a low temperature process appears to be the best technique to deposit CdS thin films with suitable properties for various device applications due to its simplicity and low cost.…”

The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

“…7 Naturally, many different synthesis processes have been tried such as spray pyrolysis, 8,9 vacuum evaporation, 10 metal organic chemical vapor deposition, 11 and chemical bath deposition. 7,[12][13][14][15][16][17][18][19][20][21][22] Among these techniques, chemical bath deposition (CBD) is a low-cost and suitable technique to prepare high quality, well adhered film reproducibly. The deposition process is based on the slow release of sulfide ions via the controlled hydrolysis of thiourea [SC(NH 2 ) 2 ] in an alkaline medium in the presence of a Cd salt and a chelating agent such as NH 3 .…”

“…The deposition process is based on the slow release of sulfide ions via the controlled hydrolysis of thiourea [SC(NH 2 ) 2 ] in an alkaline medium in the presence of a Cd salt and a chelating agent such as NH 3 . 23 The very high resistivity of the asdeposited films, typically on the order of 10 6 -10 7 O-cm at room temperature, [13][14][15][16][17][18][19][20][21][22][23][24] has been attributed to lattice defects and dislocations, [25][26][27][28][29] and can be reduced by annealing the film. The physical and chemical properties of not only CdS films but also most of the binary metal chalcogenides of II-VI semiconductors obtained by CBD critically depend on preparative parameters such as the source and concentration of metal and chalgonide ions, pH of the deposition solution, deposition time and temperature, and gas phase process parameters such as temperature, gas partial pressure, and the time of annealing.…”