Study of the interaction of polymethylmethacrylate fragments with methyl isobutyl ketone and isopropyl alcohol

Mohammad, Mohammad Ali; Santo, Kolattukudy P.; Dew, S. K.; Stepanova, Maria

doi:10.1116/1.4766318

Cited by 14 publications

(8 citation statements)

References 37 publications

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“…This is consistent with the rheological results stated above and exhibits the same R h trend in PMMA-g-NPs with IL systems. 43,44 In addition, compared to the simulation results of PMMA fragments with the same repeat units in some organic solvents, 56 the value of R g in our study is very close to but slightly lower than the reported data, which further confirms the reliability of our simulation.…”

Section: Resultssupporting

confidence: 87%

Influence of ionic liquids on the chain dynamics and enthalpy relaxation of poly(methyl methacrylate)

Liu

Fang

Dan

et al. 2022

Phys. Chem. Chem. Phys.

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Section: Resultssupporting

confidence: 87%

Influence of ionic liquids on the chain dynamics and enthalpy relaxation of poly(methyl methacrylate)

Liu

Fang

Dan

et al. 2022

Phys. Chem. Chem. Phys.

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“…To evaluate the effect of the development process on adhesion, it is known that development is not a layer-by-layer linear dissolution process. 20,21 Instead, the solvent diffuses and penetrates below the top (recessing) surface and dissolves or swells the resist there. The situation is worse for low energy exposure because the under-exposed resist at the bottom is more susceptible to swelling/weakening by the solvent developer that has penetrated there.…”

Section: Resultsmentioning

confidence: 99%

Lift-off with solvent for negative resist using low energy electron beam exposure

Dey

Cui

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Lift-off and direct etch are the two most popular pattern transfer methods for electron beam lithography. For some applications negative resist would offer significantly less exposure time than positive one. Unfortunately, lift-off using negative resist is very challenging because the resist profile is typically positively tapered due to electron forward scattering, and upon exposure, negative resist is cross-linked and thus insoluble in solvents. Here, the authors will show that low energy exposure can circumvent both issues simultaneously, and the authors achieved liftoff of Cr with polystyrene resist using a solvent xylene. Moreover, low energy exposure offers proportionally higher resist sensitivity. Lastly, since low energy electrons are mostly stopped inside the resist layer, radiation damage to the sublayer is greatly reduced. Thus, the current method may be employed to fabricate metal nanostructures on top of an organic conducting layer.

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“…Second, inclusion of explicit developer solvent molecule will be performed for improving the description of development process from the current dissoluble chain removal method, and several molecular/stochastic simulations − will be a useful guideline for the modeling.…”

Section: Discussion: Pag Loading Effectmentioning

confidence: 99%

Multiscale Simulation Approach on Sub-10 nm Extreme Ultraviolet Photoresist Patterning: Insights from Nanoscale Heterogeneity of Polymer

Kim¹,

Moon²,

Choi³

et al. 2018

Macromolecules

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We developed a multiscale model that integrates density functional theory (DFT), molecular dynamics (MD), and the finite difference method (FDM) to reflect the heterogeneous spatial distribution of the material ingredients on sub-10 nm photoresist (PR) pattern fabrication using extreme ultraviolet lithography (EUVL). It allowed the exploration of phototriggered chemical reactions at the molecular level, including photoacid generator (PAG) dissociation, acid diffusion-coupled deprotection, and solubility switching of individual polymer chains. To quantify the progress of the deprotection, a protection ratio of each pendant group was tracked to distinguish the dissoluble PR chains from the developer as the process time elapsed. Deprotection was shown to preferentially occur in the pendant group adjacent to the acid molecule (<0.74 nm), which determined the chemical gradient and solubility switching trend of the PR chains. Based on the full description of the phototriggered chemical reaction, the morphology of the PR line pattern was predicted after wiping out the dissoluble chains. We particularly examined the PAG loading effect (5.68−30.12 wt %) on the line edge roughness (LER) of the PR pattern and predicted the LER inversion phenomenon at the critical threshold PAG concentration, which qualitatively agreed with the experimental observations. Such a LER trend due to PAG loading was explained by the reciprocal interaction between the homogeneous packing of the acid from the dissoluble PR chains and the acid clustering behavior. The variation of the homogeneity of the deprotection in each pendant group was verified as a function of PAG concentration, which rationalized the existence of the reciprocal interaction.

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Study of the interaction of polymethylmethacrylate fragments with methyl isobutyl ketone and isopropyl alcohol

Abstract: Electron beam lithography of nanostructures using 2-propanol:water and 2-propanol:methyl isobutyl ketone as developers for poly-methylmethacrylate J.

Cited by 14 publications

References 37 publications

Influence of ionic liquids on the chain dynamics and enthalpy relaxation of poly(methyl methacrylate)

Influence of ionic liquids on the chain dynamics and enthalpy relaxation of poly(methyl methacrylate)

Lift-off with solvent for negative resist using low energy electron beam exposure

Multiscale Simulation Approach on Sub-10 nm Extreme Ultraviolet Photoresist Patterning: Insights from Nanoscale Heterogeneity of Polymer

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