Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke model

Abstract

Reduction in intermediate layer thickness of CoCrPt -SiO 2 perpendicular recording media by using Ru -SiO 2A spectroscopic ellipsometry study of the interfacial stresses and their correlation with microvoids in very thin thermally grown SiO2 films

Is adhesion superficial? Silicon wafers as a model system to study van der Waals interactions

“…61 These findings were matched by predictions of theoretical models. 62,63 The results of theses studies, however, are not contradictory, but arise from the different methods applied. A problem of optical reflectivity methods, such as ellipsometry, is that they are not able to determine the density and the thickness of thin films (≤ 5 nm) independently (not to mention to distinguish between two of such films).…”

Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

“…5,18,19 While the bulk of the oxide is a stable amorphous SiO 2 layer, 18 the region near the Si͑001͒ interface may be a transition layer, possibly stabilized by high stresses which are known to exist within the oxides 20,21 and especially at the Si/SiO 2 interface. 14 Alternatively, the layer could be a region of higher density strained silicon, where the lattice is compressed slightly in the vertical.…”

Study of SiO2/Si Interface by Surface Techniques

“…Previous studies [11][12][13] 2 . Different structural models [14][15][16][17] have been proposed for SiO 2 on Si (100), each predicting a characteristic distribution of oxidation states, and most of the models assume an atomically abrupt interface. From experiments was observed [1] at interface the existence of a large portion of Si 3+ , and the model in accord this observation is that of an extended-interface for SiO 2 /Si (100) by minimizing the strain energy [17].…”

“…Different structural models [14][15][16][17] have been proposed for SiO 2 on Si (100), each predicting a characteristic distribution of oxidation states, and most of the models assume an atomically abrupt interface. From experiments was observed [1] at interface the existence of a large portion of Si 3+ , and the model in accord this observation is that of an extended-interface for SiO 2 /Si (100) by minimizing the strain energy [17]. Relatively new models ('90 years) are based for SiO 2 Experimental techniques as the one presented in this work were used to determine the structure of the interface, its extend and to appreciate its roughness.…”