Study of the mass transport during crystal growth from high-temperature solutions by the “high-resolution induced striation method”

Görnert, P.; Wende, G.

doi:10.1002/pssa.2210370219

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…Since the pulse sequence is known, the crystal growth rate and changes in crystal shape can be followed even when the,crystals were grown in a totally enclosed crucible. This method was applied to flux growth particularly effectively by Gornert and co-workers (Gornert and Wende, 1976) and the review by Gornert and Sinn (1985) lists 15 studies using ISM. In addition to yielding data on growth rate and growth history, ISM can be used to measure the supersaturation which is normally unknown, for example during slow cooling.…”

Section: Mechanisms Of Flux Growthmentioning

confidence: 99%

Crystal Growth in Science and Technology

Arend¹,

Hulliger²

1989

NATO ASI Series

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Section: Mechanisms Of Flux Growthmentioning

confidence: 99%

Crystal Growth in Science and Technology

Arend¹,

Hulliger²

1989

NATO ASI Series

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“…2. With the help of these induced striations as presented in 3 we have investigated quantitatively the growth processes during garnet single crystal growth [5,6]. A review [7] will be published elsewhere.…”

Section: Rtmentioning

confidence: 99%

“…The relaxation time for solute exhaustion [5] V 6~ff 32 ---- (6) FD is in the range of some hours. For typieal values 6eff/D ~ 1.5.…”

Section: Rtmentioning

confidence: 99%

Induced striations in LPE garnet layers

Görnert

Bornmann

1979

Acta Physica

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At a given chemical eomposition of a solution the composition of the deposited material depends on the growth rato. Therefore well defined changes of the growth tate can be used to prepare single crystals of LPE layers with defined changes of the composition. In the case of garnet single crystals the growth rato has been modulated by the variation of the undercooling to generate induccd striations, which aro a tool in investigating and optimizing the growth process in high tempcrature solutions. During the course of liquid phase epitaxy expcriments (LPE) of garncts the variations of the growth rato were produced by changing the rotation rato to generate a layered structure. By measuring the thickness of the layers optically one gets the dependences of the growth rateas a function of the time, rotation rate, and undercoo]ing by one experiment with one substrate in each case.Based on the work of LEVINSTEIN et al [1] and GIESS ot al [2] the isothermal LPE dipping method with axial substrate rotation plays the dominant tole in growing epitaxial garnet films on nonmagnetic substrates for applications in. the microwave and memory technique. Besides this technical importance, the same teehnology is excellently suitable for studying both the elementary processes in the course of crystal growth and the relation between crystal growth, the real structure, and properties.In this paper the possibility will be shown of measuring of the growth rato economically and exactly on the basis of induced striations in opilayers, the growth rato being one of the most important parameters of aH problems linked with crystal growth.Using the diffusion boundary layer approximation the steady state growth rato v in the solvont-solute binary system is given for diluted solutions byCS ~eff (~eff ropresents the integral resistivity D •eff ~ 1 + --(2) D D kwhich eontains the transport (~/D) sueh as eonveetion, diffusion and interfaeial proeesses (l/k) such as desolvation, adsorption, surface diffusion, incorporation. The moaning of symbols is explained in the list at the end of the text. The so-called diffusion boundary layer thicknes ~ (see Fig. 1) is proportional to the negative square root of the rotation rate (~ ~--r -1/2) aceording

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“…After the initial period of the crystal growth process when the sum over all growing faces, z F,, can be taken approximately as constant in time, the growth rate v, of a n individual growing face F , in a slow-cooling experiment, where generally more than one spontaneously nucleated crystal grows, is given by [6] n where T L is a virtual temperature corresponding to the concentration cL far from any growing face, T, the temperature of the growing face F,, and dTldt the cooling rate.…”

Section: Theoreticalmentioning

confidence: 99%

“…I n this paper we present measurements of linear growth rates with and without ACRT. The experimental results will be discussed in terms of the model of n growing faces [6].…”

Section: Introductionmentioning

confidence: 99%

Study of ACRT influence on crystal growth in high-temperature solutions by the “high-resolution induced striation method”

Wende¹,

Görnert²

1977

Phys. Stat. Sol. (a)

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The growth rate of an individual growing face of a crystal growing together with other crystals is calculated for slowly cooled high‐temperature solutions taking into consideration changes of the boundary layer thickness caused by switching on and off “accelerated crucible rotation technique (ACRT)”. The influence of ACRT on the growth rates of Ga‐YIG single crystals is measured by induced striations generated by periodic temperature variations. With this method it is possible to estimate ACRT effectiveness expressed in the relation of the effective boundary layer thicknesses without and with ACRT, δeff0/δeff ACRT, the value of which is only about 1.4 at the demonstrated example.

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Study of the mass transport during crystal growth from high-temperature solutions by the “high-resolution induced striation method”

Cited by 11 publications

References 9 publications

Crystal Growth in Science and Technology

Crystal Growth in Science and Technology

Induced striations in LPE garnet layers

Study of ACRT influence on crystal growth in high-temperature solutions by the “high-resolution induced striation method”

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