The growth rate of an individual growing face of a spontaneously nucleated crystal growing together with some other crystals in the same run is calculated for slow cooling experiments taking into consideration changes of the cooling rate or temperature jumps. The time constant as well as further parameters of the system are determined experimentally by induced striations which are generated in Ga substituted YIG single crystals by periodic temperature fluctuations of 1.1 K in 36 min and 1.9 K in 54 min time intervals.

The growth rate of an individual growing face of a crystal growing together with other crystals is calculated for slowly cooled high‐temperature solutions taking into consideration changes of the boundary layer thickness caused by switching on and off “accelerated crucible rotation technique (ACRT)”. The influence of ACRT on the growth rates of Ga‐YIG single crystals is measured by induced striations generated by periodic temperature variations. With this method it is possible to estimate ACRT effectiveness expressed in the relation of the effective boundary layer thicknesses without and with ACRT, δeff0/δeff ACRT, the value of which is only about 1.4 at the demonstrated example.