Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.

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Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

Cited by 2 publications

References 9 publications

Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

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