Study of the relaxation process during InGaAs/GaAs (001) growth from <i>in situ</i> real-time stress measurements

González, M. U.; González, Y.; González, L.

doi:10.1063/1.1524303

Cited by 15 publications

(12 citation statements)

References 14 publications

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“…In all cases, we observe a linear increase in ⌺ , indicating pseudomorphic growth along ͓110͔. 8 This behavior is in complete agreement with QWR formation, which as a result of their geometry relax stress only in the direction perpendicular to their orientation and, so far, no stress relaxation due to QWR formation can be measured in ͓110͔ direction. 9,12 Accordingly, ⌺ evolution in ͓110͔ corresponds unequivocally to the total amount of InAs grown.…”

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confidence: 69%

“…Stress evolution during this process has been obtained by optical monitorization of the substrate curvature. [8][9][10] This technique provides a direct, in situ, and in real time measurement of the film accumulated stress, ⌺ ͑stress integrated along the layer thickness͒. 8,10 We use thinned InP͑001͒ substrates ͑190 m͒ to improve sensitivity, elongated along ͓110͔ to detect stress variations in this direction.…”

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confidence: 99%

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Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Fuster¹,

González²,

González³

et al. 2004

Applied Physics Letters

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Size and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy ͑TEM͒ characterization of stacked layers of InAs quantum wires ͑QWRs͒ separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)Ͻ20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two-to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers. © 2004 American Institute of Physics. ͓DOI: 10.1063/1.1759374͔The incorporation of nanostructures in electronic and optoelectronic devices provides properties improvement and design possibilities, yet requiring the control of their size and position. For self-assembled nanostructures, the size homogeneity and spatial distribution can be greatly improved by stacking several layers. [1][2][3][4] In this context, the vertical stacks of self-assembled InAs quantum wires ͑QWRs͒ grown on InP͑001͒ are of particular interest for lasers, as they emit light at 1.30 and 1.55 m. [5][6][7] In stacks of nanostructures, the buried ones produce inhomogeneous strain fields that propagate toward the capping layer surface where the next nanostructures will be formed. 1,2 This leads to a vertical correlation between the nanostructures layers depending both on the size of the buried nanostructures and the spacer layer thickness.In this work, we have studied the growth of multilayers of InAs QWRs with different spacer layer thicknesses, d(InP), by in situ and in real time stress measurements and reflection high-energy electron diffraction ͑RHEED͒. A strong influence of the spacer layer thickness on QWR formation process in the second and successive layers of the stack has been observed: QWRs are correlated for d(InP)Ͻ20 nm, where a reduction of the amount of deposited InAs necessary for QWR formation ͑observed by RHEED͒ together with an increase in InAs growth rate ͑ob-tained from stress measurements͒ take place. In order to explain these results, we propose a model that is strongly supported by transmission electron microscopy ͑TEM͒ images. Our experiments provide quantitative values of the extra amount of material involved in the formation of vertically correlated self-assembled nanostructures, as well as the evidence of the absence of a two-dimensional ͑2D͒-threedimensional ͑3D͒ growth mode transition as the relevant process in nanostructures self-assembling during stacking.The samples under study consist of...

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confidence: 69%

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confidence: 99%

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Fuster¹,

González²,

González³

et al. 2004

Applied Physics Letters

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“…Unfortunately, only heterostructures of one particular composition (In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As) can be grown lattice-matched to a commercial binary substrate (InP). In order to maximize the flexibility in the choice of alloy composition, and correspondingly to tune the g factor, several research studies have been carried out to understand the mechanisms of strain relaxation in these systems in cases where a lattice mismatch to the substrate exists [6][7][8]. It was demonstrated that a defectfree region with an arbitrary In concentration can be obtained both on GaAs and InP substrates by inserting a step-graded buffer layer (BL) with increasing In composition in order to smoothly adapt the lattice constant of the substrate to the one of the topmost layer.…”

Section: Introductionmentioning

confidence: 99%

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

et al. 2005

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“…To understand and control the growth of InAs on GaAs(001), therefore, in situ observation of internal strain of the nanoislands is essential. So far, strain evolution during layer-by-layer growth of InGaAs/GaAs has been measured by detecting the bending of the substrate that is shaped as a cantilever [20]. In this method, the average strain of the InGaAs layer was estimated from the accumulated stress that was given to the substrate.…”

Section: Discussionmentioning

confidence: 99%

Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction

Takahasi

Kaizu

Мizuki

2006

e-J. Surf. Sci. Nanotechnol.

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A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of a combination of synchrotron radiation and a two-dimensional X-ray detector, X-ray diffraction intensity mappings in the reciprocal space have been measured during growth at a rate of 9.6 s per frame. This method provides information on strain distribution and height of Stranski-Krastanov islands under the in situ condition. Because the use of X-rays is not hindered by ambient pressure, this technique is suitable for industry-oriented applications such as organometallic vapor-phase epitaxy as well.

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Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

Cited by 15 publications

References 14 publications

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction

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