Study of the room temperature molecular memory observed from a nanowell device

Gergel, Nadine; Majumdar, N. C.; Keyvanfar, K.; Harriott, L. R.; Bean, J. C.; Pattanaik, Gyana; Zangari, Giovanni; Yao, Yuxing; Tour, James M.

doi:10.1116/1.1931687

Cited by 29 publications

(23 citation statements)

References 15 publications

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“…When we tested the pure nitro monolayer devices, NDR-like behavior was only observed during a switch from high to low conductivity and was not reversible. 14 The second behavior was similar to that shown in Fig. 6a, but significantly lower in current.…”

Section: Electrical Characteristicssupporting

confidence: 73%

The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers

Majumdar

Gergel-Hackett

Bean

et al. 2006

Journal of Elec Materi

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In order to realize molecular electronic devices, molecules with electrically interesting behavior must be identified. One molecule that has potential for use in devices is an oligo(phenylene ethynylene) (OPE) molecule with nitro sidegroup(s). These "nitro" molecules have been reported to show electrical switching with memory behavior, as well as negative differential resistance (NDR). However, different research groups testing the nitro molecules in different test beds have observed different electrical behaviors. In this work, we assembled two different nitro monolayers: one completely composed of nitro molecules and the second a mixed matrix where nitro molecules were separated by dodecanethiol molecules. We used scanning tunneling microscopy to image each of the monolayers and observed that the nitro molecules were effectively inserted into the ordered dodecanethiol monolayer. We tested the electrical behavior of the pure monolayer, as well as the mixed monolayer, in our nanowell test device. The nanowell devices were fabricated on micron-size gold lines patterned on oxide-coated silicon wafers. The gold lines were covered with a silicon dioxide layer, through which a nanometer size well was milled. This nanowell device was filled with a self-assembling monolayer of organic molecules, and capped with titanium and gold. The nanowell electrical results showed switching with memory for the pure nitro monolayer, but not for the mixed monolayer. This switching behavior consisted of a molecule starting in a high conductivity state and switching to a low conductivity state upon application of a threshold voltage. The high conductivity state could only be returned by application of an opposite threshold voltage.

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Section: Electrical Characteristicssupporting

confidence: 73%

The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers

Majumdar

Gergel-Hackett

Bean

et al. 2006

Journal of Elec Materi

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“…The search for strong non-linear effects in molecules (rectification, hysteresis, bistability, NDR) is evident in current literature (see e.g. [9], [10], [11], [12], [13], [14], [15], [16]). Recent experimental [12] and theoretical [13], [17] work have drawn attention to bistability and NDR in phorphyrine-based two-terminal devices.…”

Section: Discussionmentioning

confidence: 98%

Robustness of logic gates and reconfigurability of neuromorphic switching networks

Chiragwandi

Skoldberg

Wendin

2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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Nanoparticle networks with functional molecular links that show current-voltage characteristics (IVC) with negative differential resistance (NDR) can be trained to perform XOR-AND logic gates (Husband et al.[1]; Sköldberg and Wendin [2]). In this work we investigate the robustness of the Nanocell network by removing links until desired logic gates no longer can be configured or operated within our simulation of the network. We present results for the robustness of XOR-AND configured (halfadder) Nanocells, as well as the effects of varying the IVC and NDR characteristics of the linker molecules.

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“…For small voltages, the device remains in one of the two possible states until the voltage applied exceeds some threshold. From the figure, the positive toggle voltage would be around the knee of the low conductivity curve in the upper-right quadrant while the negative toggle point is defined by the peak in the lower-left quadrant [12], [18]. If the voltage applied across the device is greater than the positive toggle point, the device switches into the high conductivity state and will switch back into the low conductivity state only when the voltage becomes more negative than the negative toggle voltage.…”

Section: Technology Consideredmentioning

confidence: 97%

“…Experiments have shown how such devices can be fabricated with useful properties such as rectification, hysteresis, and NDR [2], [18]. From the perspective of fabrication, such devices have gained a good level of support due to their reliance on self-assembly during device development.…”

Section: Technology Consideredmentioning

confidence: 99%

A Programmable Majority Logic Array Using Molecular Scale Electronics

Rose

Stan

2007

IEEE Trans. Circuits Syst. I

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In recent years, many advances have been made in the development of molecular scale electronics which have inspired interest in using the devices thereof for memory and logic. This paper describes the design of a logic architecture using a particular class of molecular devices. Specifically, it is shown that the feature of hysteretic switching common to many molecular devices can be utilized to build programmable arrays. Also utilized in the designs presented here are molecular devices which exhibit negative differential resistance (NDR), a property useful for providing signal restoration at the nanoscale. This work begins by describing the potential for both programmability and NDR in molecular scale electronics. These ideas are then brought together in the design of a programmable logic array based on majority logic.Index Terms-Majority logic, molecular electronics, nanotechnology, negative differential resistance (NDR), resonant tunneling diode (RTD), VLSI.

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Study of the room temperature molecular memory observed from a nanowell device

Cited by 29 publications

References 15 publications

The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers

The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers

Robustness of logic gates and reconfigurability of neuromorphic switching networks

A Programmable Majority Logic Array Using Molecular Scale Electronics

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