2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 2016
DOI: 10.1109/pvsc.2016.7750090
|View full text |Cite
|
Sign up to set email alerts
|

Study of the spin on dopant technique as alternative for the fabrication of c-Si solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2019
2019
2020
2020

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 4 publications
0
3
0
Order By: Relevance
“…Silicon nanograss was grown only in front surface by coating the polymer on rear side.SOD (spin on doping) and RTA (rapid thermal annealing) wereparticularly necessary for swallow junction diffusion. High temperature annealing with rapid temperature rise and drop reduced thermal budget [9]. In this paper we have used SOD and RTA for diffusion over silicon nanograss structure.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon nanograss was grown only in front surface by coating the polymer on rear side.SOD (spin on doping) and RTA (rapid thermal annealing) wereparticularly necessary for swallow junction diffusion. High temperature annealing with rapid temperature rise and drop reduced thermal budget [9]. In this paper we have used SOD and RTA for diffusion over silicon nanograss structure.…”
Section: Introductionmentioning
confidence: 99%
“…An alternative method is to use spin-on dopant (SOD), which spins a dopant-containing solution onto Si substrates, followed by the thermal curing and then the thermal diffusion steps (Teh et al, 1989;Martínez et al, 2016;Hoarfrost et al, 2013). This method offers a number of advantages over conventional methods that were abovementioned: i) Room temperature spinning process and only one time furnace used for drive-in enable the SOD technique simple and rapid; ii) The SOD sources feature relative low-cost and safe, and therefore the monitor toxic gas can be eliminated; and iii) abandon of high energy dopant ions allow for SOD technique being nondestructive.…”
Section: Introductionmentioning
confidence: 99%
“…We proposed using spin-on dopant [2] and electron beam lithography as a low-cost alternative. Spin-on dopant is commonly used to make electronic devices [3,4] and solar cells [5,6] but, to the best of our knowledge, has not been used to fabricate active silicon photonic devices. Students were given the objective to perform a design-fabricate-test cycle of a thermo-optic 2x2 switch based on a Mach-Zehnder Interferometer.…”
Section: Introductionmentioning
confidence: 99%