Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Anaya, J.; Torres, A.; Martín-Martín, A.; Souto, J.; Jiménez, J.; Rodrı́guez, A.; Rodrı́guez, T.

doi:10.1007/s00339-012-7509-y

Cited by 15 publications

(12 citation statements)

References 41 publications

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“…It is important to note that the effective excitation power on the NW depends on its position inside the Gaussian power distribution of the focused laser beam. 26,27 Prior to the Raman measurements, the dimensions and morphology of each NW were characterized in a field emission scanning electron microscope (FESEM).…”

Section: Experimental and Samplesmentioning

confidence: 99%

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Pura

Anaya

Souto

et al. 2018

Journal of Applied Physics

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Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

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Section: Experimental and Samplesmentioning

confidence: 99%

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Pura

Anaya

Souto

et al. 2018

Journal of Applied Physics

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“…36,40 This, combined with their small mass, leads to a good thermalization with the surface in direct contact with the Si NWs. 36,40 All of these properties make the Si NWs therefore excellent Raman nanosensors, allowing to extract the temperature of non-Raman active materials such as the metals of the here studied structures with high spatial resolution.…”

Section: -39mentioning

confidence: 99%

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Anaya

Rossi

Alomari

et al. 2015

Applied Physics Letters

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The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

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“…Much of the work done using Raman on SiNWs has been on chemically synthesized or chemically etched SiNWs, which typically * daniel.fan@psi.ch exhibit a size, position, and orientation distribution. Therefore, the Raman spectra require further deconvolution to account for these geometric distributions within the laser probe spot [57].…”

Section: Introductionmentioning

confidence: 99%

Strain and thermal conductivity in ultrathin suspended silicon nanowires

et al. 2017

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We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-dependent Raman spectroscopy showed that nanowires connected monolithically to the bulk had a consistent strain of ∼0.1%, whereas nanowires clamped by metal exhibited variability and high strain of up to 2.3%, having implications in strain engineering of nanowires. The thermal conductivity at room temperature was measured to be ∼1 W/m K for smooth nanowires and ∼0.1 W/m K for rougher ones, similar to results by other investigators. We found no modification of the bulk properties in terms of intrinsic scattering, and therefore, the decrease in thermal conductivity is mainly due to boundary scattering. Different types of surface roughness, such as constrictions and line-edge roughness, may play roles in the scattering of phonons of different wavelengths. Such low thermal conductivities would allow for very efficient thermal energy harvesting, approaching and passing values achieved by state-of-the-art thermoelectric materials.

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Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

Cited by 15 publications

References 41 publications

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Strain and thermal conductivity in ultrathin suspended silicon nanowires

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