2015
DOI: 10.1063/1.4922035
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Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Abstract: The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substra… Show more

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Cited by 45 publications
(23 citation statements)
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“…Due to the columnar growth and coalescence of CVD polycrystalline diamond, strong gradients in the thermal conductivity are present from the nucleation surface towards the growth direction within the diamond [18]. One benefit of the transient thermoreflectance is that it probes the effective dia of the diamond as grown on GaN, which represents the spatially weighted average over the 100 m diamond thickness in the growth direction.…”
Section: Resultsmentioning
confidence: 99%
“…Due to the columnar growth and coalescence of CVD polycrystalline diamond, strong gradients in the thermal conductivity are present from the nucleation surface towards the growth direction within the diamond [18]. One benefit of the transient thermoreflectance is that it probes the effective dia of the diamond as grown on GaN, which represents the spatially weighted average over the 100 m diamond thickness in the growth direction.…”
Section: Resultsmentioning
confidence: 99%
“…The power density was set at a typical value of 5 W/mm, dissipated in a 0.5 lm-long, 100 nm-thick volume at the drain edge of the gate foot where most Joule heating occurs. 50 Given that the cross-plane thermal conductivity is always higher than the in-plane thermal conductivity for this columnar PCD, 51 the experimental value can thus be used to determine an upper limit of the expected thermal benefit of PCD. By adding a PCD heat spreader on top of the device sourcedrain opening, Fig.…”
mentioning
confidence: 99%
“…This makes the GaN/diamond interface the critical region to be optimized in order to maximize the performance of devices. In recent years significant improvements in the thermal transport properties of the GaN/diamond interface have been achieved; for example the optimization of the GaN/diamond interfacial dielectric layer and the improved thermal properties of diamond near its nucleation site at the GaN/diamond interface [9][10][11]. As a consequence of these advances in understanding, it is now considered possible to achieve the best device characteristics by further optimizing the thermal transport at and/or near the GaN/diamond interface.…”
mentioning
confidence: 99%