Study of thin silicon nitride films toy isothermal depolarization of mnos structures

The influence of X-ray irradiation on the stationary conductivity and isothermal depolarization of MNOS structures is studied. It is shown that low-temperature annealing of radiated MNOS structures without bias voltage increases activation energy under isothermal depolarization from EA = 0.8 eV up to E , = 1.4 eV. The stationary conductivity activation energy is not changed and is equal to E A = 1.4 eV. ~CCJle~OBaHO BJIEifiHEie 06nyse~~ifi PeHTreHOBCKHMH KBaHTaMH H a CTaqHOHaPHYH) np0-BOgEiMOCTb Ei H30TepMEiYeCKYH) ~enonHpa3aquH3 M H O n CTPYIETYP. nOKa3aH0, YTO HEi3KO-TeMIIepaTypHbIfi OTXKHr 06JIYYBHHbIX MHOn CTpyKTYP 6e3 HanpfiXeHEifi CMemeHHFI yBenasmaeT a~epram aKTasaqm n p~i H~O T~P M M Y~C K O~~ nenonfipmaqm co ~H~~~H I I F I E A = 0,8 eV no ~H~Y~H E I R EA,= 1,4 eV. 3~e p r m aKTEisaqua cTaqEioHapHoi3 ~~O B O~E~M O C T H He MeHHeTCfi Pi COCTaBJIfieT BeJlMWlHy EA 1 1,4 ev.

Section: Methodsmentioning

confidence: 99%

Isothermal Annealing of Space Charge in MNOS Structures

Gurtov¹,

Назаров²

1986

“…The decrease of the concentration of hydrogen groups exerts an influence on the trap spectrum of Si,N, layers. Por example, the analysis of this influence in [3] has shown that the HTA of Si,N4 samples, obtained by monosilane ammonolysis in hydrogen flow led to a decrease of l) Prospekt Akademika Lavrenteva 13, 630090 Novosibirsk USSR.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-temperature annealing on PL spectra of silicon nitride

Васильев

Mikhailovskii

1985

Photoluminescence (PL) spectra of amorphous Si3N4 layers in the impurity absorption region are investigated by means of waveguide method of photoexcitation. HeCd (γ = 441.6 nm) and argon (γ = 457.9 nm) lasers are used. The samples of Si3N4 films are different in the content of hydrogen during synthesis. It is found that the presence of hydrogen leads to the decrease of PL intensity (γ = 520 nm) without essential change of spectral composition. High temperature annealing (HTA) of Si3N4 samples in vacuum accompanied by concentration of hydrogen decrease, leads to PL intensity change for Si3N4 films fabricated by ammonolysis of silicon tetrachloride and monosilane at low pressure. For Si3N4 films prepared by ammonolysis of monosilane in hydrogen flow at atmospheric pressure a shift of the emission spectra (γ ≈︁ 520 nm) to the red region (γ = 710 nm) is observed. This shift correlates with the decrease of trap depth after HTA samples observed earlier and evaluated by electrophysical measurements.

Study of Tunnel Currents of Electrons and Holes in Thermal SiO2 with Charge Accumulation in the Dielectric

Ефимов

Meerson

Еvtukh

1985

Self Cite

on the occasion of his 80th birthday Accumulation of positive and negative charges in t h e structures metal-silicon nitride (300 nm)tunnel thick SiO, sublayer ( 5 to 10 nm)-silicon in fields of (6 to 20) x los V/cm is studied. A dependence of the accumulation current of electrons and holes on the reverse electric field in a dielectric is obtained on the basis of data on charge accumulation. The dependence obtained for electrons corresponds to the carrier injection from silicon according to the Fowler-Nordheim mechanism. Possible mechanisms of positive charge accumulation are discussed. The obtained anomalously high value of the exponential in the dependence of accumulation current on the reverse field equal to 7.5 x 108V/cm, and is assumed to be due to tunnel injection. For this case an estimation for the effective mass of holes in the forbidden zone of SiO, of about 2 . 5~~~ is obtained. MeTaJIJI-IIHT~lHJI, IipeMHMR (300 nm)-TyHHeJIbHO-TOJICTbIfi IIOllCJIOi% (5 a0 10 nm) sic),-I