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Photoluminescence (PL) spectra of amorphous Si3N4 layers in the impurity absorption region are investigated by means of waveguide method of photoexcitation. HeCd (γ = 441.6 nm) and argon (γ = 457.9 nm) lasers are used. The samples of Si3N4 films are different in the content of hydrogen during synthesis. It is found that the presence of hydrogen leads to the decrease of PL intensity (γ = 520 nm) without essential change of spectral composition. High temperature annealing (HTA) of Si3N4 samples in vacuum accompanied by concentration of hydrogen decrease, leads to PL intensity change for Si3N4 films fabricated by ammonolysis of silicon tetrachloride and monosilane at low pressure. For Si3N4 films prepared by ammonolysis of monosilane in hydrogen flow at atmospheric pressure a shift of the emission spectra (γ ≈︁ 520 nm) to the red region (γ = 710 nm) is observed. This shift correlates with the decrease of trap depth after HTA samples observed earlier and evaluated by electrophysical measurements.