The effect of plasma treatment on the chemical reactivity of the surface of porous layers based on methyl‐doped silicon dioxide is considered. A principal difference between the effects of plasma on materials with the pores of different sizes is demonstrated. It is shown that the VUV irradiation passivates the surface of the layers with smaller pores (1.1 nm in radius), while the films with larger pores (5.5 nm) do not get passivated (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)