Study of TSV leakage current and breakdown voltage

Abstract

Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is put forward so that leakage and breakdown data could be easily obtained. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. It was found that the most contributing factor to the TSV leakage and breakdown is the uniformity of the insulator layer thickness, while via-diameter and pitch between TSVs are factors of failure mechanism of the low-frequency characteristics.

Fabrication and characterization of a low-cost interposer with an intact insulation layer and ultra-low TSV leakage current

“…Under the bias voltage of 30 V, TSV leakage current for pitch = 220 and 1000 μm are 1.43 × 10 −13 and 1.00 × 10 −14 A, respectively. This is much lower than the usual value in the range of 10 −12 -10 −9 A [11,19,29]. This ultra-low leakage current indicates a high-quality TSV insulation layer of the interposer.…”

“…One of the key concerns with regard the electrical reliability is the TSV leakage current, which causes excess Joule heat and unexpected RC paths (leading to subsequent thermal issues and signal delay) [18]. The integrity and uniformity of the TSV insulation layer are key factors affecting the leakage current [19]. However, defects impairing the insulation integrity and uniformity are easily introduced during the manufacturing process (e.g.…”