Three potential contributing factors to the TSV leakage and breakdown are discussed and analyzed in this study. In addition, an in-line testing methodology is put forward so that leakage and breakdown data could be easily obtained. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. It was found that the most contributing factor to the TSV leakage and breakdown is the uniformity of the insulator layer thickness, while via-diameter and pitch between TSVs are factors of failure mechanism of the low-frequency characteristics.

An in-line testing procedure of blind TSVs is put forward in this study. Insulation integrity is chosen to determine the eligibility. It is to probe the upper end of two or more neighboring TSVs during the manufacturing right after the blind vias being formed. Finite element method simulation was used to illustrate the testing principle, and experimental test were carried out for validation. During the test, leakage current data between two blind vias is obtained and I-V characteristic curve is plotted. It can be determined whether or not the TSVs are qualified.

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