Study of Undoped and Indium Doped ZnO Thin Films Deposited by Sol Gel Method

Abstract

In this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol-gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV-Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.

Influence of Inductive Effect in Organic Residuals Content in IZO Thin Films and the Performance on the Behavior of MIS Capacitors on Plastic

“…This characteristic is commonly reported in oxide semiconductors [8]. Figure 1b shows the Raman spectra of the films where vibrational modes were found at 116, 374, 434, 573, 654, 812 and 1110 cm −1 corresponding to modes E2(low), A1(TO), E2(high), E1(LO), E1(TA+LO), E2(high)-E2(low) and A1(2LO), respectively [9][10][11][12][13]. The E2(low) mode is associated with vibrations of the Zn sublattice, and the high E2(high) mode is caused by vibration of oxygen atoms, whereas the E1(LO) mode is related to the vibrations of Zn atoms [9].…”

Colloidal synthesis and characterization of nanostructured pure ZnO and In doped ZnO thin films

“…2), indicates a deterioration of the crystalline quality of the lm. This observation has con rmed by the XRD spectra, which may be due to the formation of stresses caused by the difference in ion size between zinc (r Zn +2 = 0.074nm) and dopant (r In +3 = 0.081nm), and dopant segregation at grain boundaries for high doping concentrations, which in uences structure growth [12,19].…”

Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films

“…Since it is more electronegative than Zn, indium picks up electrons from Zn and subsequently decreases the screening effect of electrons for Zn [ 99 ]. Peaks observed at 444.3 eV and 452.2 eV shown in Figure 18 b correspond to the states of indium 3d 5/2 and indium 3d 3/2 , respectively, which are representative of the In 3+ bonding states from In 2 O 3 [ 100 ]. XPS O 1s spectra, shown in Figure 18 c, was deconvoluted into three peaks using Gaussian fitting [ 101 ].…”