Study on CdSe Nanoparticles Synthesized by Chemical Method

Abstract

CdSe is a II-VI group semiconducting material with optimum bulk band gap of 1.74eV. It is a promising material due to its wide range of technological applications in optoelectronics devices. CdSe nanoparticles have been synthesized at different temperatures starting from Room temperature to 80°C using appropriate precursor solutions containing Cadmium acetate, Triethanolamine (TEA), Ammonia and Sodium selenosulphate. The pH of Solution was around 10.50 ± 0.10 during synthesis. We confirmed the elemental analysis by Energy Dispersive X-ray Analysis (EDAX) and X-ray Photoelectron Spectroscopy (XPS) technique. X-Ray Diffraction (XRD) studies shows that the synthesized nanoparticles belonged to cubic phase with crystallite size lying between 2nm-4nm. The effect of temperature on particle size, lattice parameter, density of dislocation and strain were investigated. Blue shift of 103nm to125nm has been observed from optical absorption spectra and raman measurements performed at room temperature using He-Ne laser (632nm, 5mW) showed the presence of longitudinal optical phonon modes. Photoluminescence (PL) studies shows a shift of 30nm when compared with the bulk PL emission peak.

Exploring the Potential of Nitrogen-Doped Graphene in ZnSe-TiO2 Composite Materials for Supercapacitor Electrode

“…The bandgap of NG-TiO 2 is smaller than the standard bandgap of TiO 2 (3.25 eV) [45,46], that is due to the dopping of N-graphene, which was also confirmed from XRD and Raman analyses. Similarly the bandgap of NG-ZnSe is lesser than the bandgap of ZnSe (2.7 eV) cited in the literature [47], owing to the doping of N-graphane in ZnSe composite. The bandgap energy (E g ) of the ZnSe-NG-TiO 2 composite estimated from tauc plot is 2.5 eV, indicationg that the composite has activity in the UV region.…”

“…that is due to the dopping of N-graphene, which was also confirmed from XRD and Raman analyses. Similarly the bandgap of NG-ZnSe is lesser than the bandgap of ZnSe (2.7 eV) cited in the literature [47], owing to the doping of N-graphane in ZnSe composite.…”

Synthesis, microstructural and optical characterizations of sol-gel grown gadolinium doped cerium oxide ceramics

“…aCompressive stress, denoted by a negative ε value for GDC, results from the assertion of equal and opposing pressures, which in turn causes the crystalline structure to shrink. 32,33 …”

“…Here, b * ¼ b cos q l and d * ¼ 2 sin q l a Compressive stress, denoted by a negative 3 value for GDC, results from the assertion of equal and opposing pressures, which in turn causes the crystalline structure to shrink. 32,33 Fig. 4 W-H plots (UDM) for GDC-00, -10, -20, and -30 ceramics.…”

Formation of a Colloidal CdSe and ZnSe Quantum Dots via a Gamma Radiolytic Technique

“…ZnSe nanoparticles of 5.14 nm with a band gap of 3.2 eV have been prepared using the micro emulsion method [22]. Larger sized particles at 11.79 nm can be prepared by chemical methods with a band gap of 3.3 eV [23]. ZnSe nanoparticles with a size between 14.3 and 17.9 nm, and with a wider band gap up to 4.48 eV, have been synthesized using hydrothermal methods [24].…”