2023
DOI: 10.1038/s41598-023-34284-8
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Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Abstract: We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2–4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs confor… Show more

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