Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Peng, Ruoshi; Meng, Xijun; Xu, Shengrui; Zhang, Jincheng; Li, Peixian; Huang, Jun; Du, Jinjuan; Zhao, Ying; Fan, Xiaomeng; Hao, Yue

doi:10.1109/ted.2019.2904110

Cited by 32 publications

(22 citation statements)

References 29 publications

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“…However, some GaN would still form small GaN crystals on the cone sidewalls, which may have negative influences on GaN growth [ 13 , 14 ]. In our previous work, we confirmed that small GaN crystals would generate dislocations [ 15 ]. When using metal organic chemical vapor deposition (MOCVD) to grow AlN or GaN NLs, the influences of small GaN crystals become more noteworthy [ 13 , 14 , 16 ].…”

Section: Introductionsupporting

confidence: 73%

“…The size of GaN crystals on the 40 nm sputtered AlON/PSS template increased from 0.54 μm to 0.70 μm by our measurement. It could be inferred that GaN crystals on the 40 nm sputtered AlON/PSS template had more chances to grow, and generated more dislocations [ 15 , 20 , 21 ].…”

Section: Resultsmentioning

confidence: 99%

“…The cross-sectional SEM images of GaN films on 10, 25, and 40 nm sputtered AlON/PSS templates were taken from the [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ] direction, presented in Figure 5 . From the cross-sectional SEM image of the GaN film on the 10 nm sputtered AlON/PSS template, we could clearly observe that GaN could not coalesce well.…”

Section: Resultsmentioning

confidence: 99%

“…Subsequently, many works proved that the utilization of sputtered AlN/PSS templates could improve the performance of GaN-based LEDs [ 18 , 19 ]. However, small GaN crystals on the cones’ surface of sputtered AlN/PSS templates may still deteriorate the crystal quality [ 15 , 20 , 21 ]. The study of small GaN crystals on sputtered AlN/PSS templates is beneficial to further improve the crystal quality.…”

Section: Introductionmentioning

confidence: 99%

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Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Gao

Peng

et al. 2020

Materials

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The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed.

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Section: Introductionsupporting

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Gao

Peng

et al. 2020

Materials

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“…III-Nitride and related alloys are attractive materials due to their immense potential in optoelectronic applications including the ultraviolet and visible range [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. The well-known Mg is generally used as p-type dopant for GaN based devices.…”

Section: Introductionmentioning

confidence: 99%

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Zhao

Tao

et al. 2020

Materials

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A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

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Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

Guo

Sun

Cui

et al. 2023

Advanced Photonics Research

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Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With the emission wavelength covering the entire visible spectrum, InGaN LEDs find various applications such as solid‐state lightings, full‐color displays, and visible light communication. However, the quantum efficiency of InGaN LEDs suffers from a dramatic decline as the emission wavelength extends from blue to green–red region. This issue restrains the lighting and display applications based on the color‐mixing monolithic lighting source system. In this review, the recent breakthroughs in long‐wavelength InGaN LEDs, together with the challenges and approaches to realize high‐indium‐composition InGaN epilayers, are introduced. These cover the different epitaxial substrates, nucleation layers, and epitaxial structures, especially multiple quantum wells active region. The related studies are also discussed to improve the long‐wavelength LEDs performance from the aspect of crystal quality, growth orientation, carrier‐injection, and 3D nanostructures. Finally, current status and perspectives for future long‐wavelength LEDs development are proposed briefly.

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Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Cited by 32 publications

References 29 publications

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure

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