Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

Choi, Ui-Min; Blaabjerg, Frede; Jørgensen, Solvejg

doi:10.1109/tpel.2016.2618917

Cited by 81 publications

(39 citation statements)

References 17 publications

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“…The following limitations of existing lifetime models are identified according to the literature and to experience: 1) Limited information is available for EOL, B X lifetime definition, and confidence level when a lifetime model is presented. In [55], [57], comprehensive degradation data analyses are presented for capacitor testing and power module testing, respectively. This reveals that the obtained B X values vary significantly with different definitions and confidence levels.…”

Section: Limitations Of Existing Lifetime Modelsmentioning

confidence: 99%

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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Section: Limitations Of Existing Lifetime Modelsmentioning

confidence: 99%

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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“…This paper will put focus on the introduction of more advanced reliability metrics to predict and validate the wear-out behaviors of power semiconductors under given mission profiles. In respect to the investigations of critical components and failure mechanisms, which have been well discussed in the past work [48], [51]- [53], are out of the scope of this paper.…”

Section: Pre-assumptions and Hardware Tools For Analysismentioning

confidence: 99%

Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application

Choi

Blaabjerg

2018

IEEE Trans. Power Electron.

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Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability predictions for the power electronics converter mainly focus on the metrics of lifetime, accumulated damage, constant failure rate or Mean-Time-To-Failure (MTTF). Nevertheless, the time-varying and probabilitydistributed characteristics of the reliability, are rarely involved. Moreover, in the public literatures, there are few evidences showing that the accuracy of the predicted reliability was experimentally validated. In this paper, a more advanced metric "Cumulative Distribution Function (CDF)" is introduced to predict the reliability performance of power electronics system based on mission profiles in motor drive application. Furthermore, the accuracy of the predicted reliability metrics is verified through a series of wear-out tests in a converter testing system. It is concluded that the CDF is a very suitable metric to predict the reliability performance of converter, and it has shown good accuracy with much more reliability information compared to the existing approaches. In this method, the correct stress translation and dedicated strength tests based on mission profiles are two key factors to ensure the efficiency and accuracy of reliability prediction. I.This is the author's version of an article that has been published in this journal. Changes were made to this version by the publisher prior to publication.The final version of record is available at http://dx.

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“…Placing sensors close to each transistor or diode in an IGBT module increases the overall cost of the inverter and also presents some packaging challenges. In addition to effective real-time thermal management and control of inverters [4], information about the junction temperature is imperative in the study of ageing and degradation of IGBT modules [5][6][7][8][9]. Such studies provide vital information needed in implementing appropriate thermal management and control strategies of the inverter which limit frequent operation of the inverter in thermally critical temperature ranges, thereby extending the lifetime of the IGBT module and consequently in overall lifetime of the inverter [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

et al. 2020

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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Study on Effect of Junction Temperature Swing Duration on Lifetime of Transfer Molded Power IGBT Modules

Cited by 81 publications

References 17 publications

Power Electronics Reliability: State of the Art and Outlook

Power Electronics Reliability: State of the Art and Outlook

Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

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