Study on FeCr thin film for a spintronic material with negative spin polarization

Suto, Hirofumi; Nakatani, Takako; Kota, Yohei; Asam, Nagarjuna; Iwasaki, H.; Amemiya, Kenta; Mitsui, Takaya; Sakai, Seiji; Li, Songtian; Sakuraba, Yuya

doi:10.1016/j.jmmm.2022.169474

Cited by 7 publications

(2 citation statements)

References 46 publications

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“…24,25 Similarly, giant magnetoresistance (GMR) studies reported that materials such as CoFeGd, FeCr, FeV, NiCr, and Fe 4 N have negative spin polarization. 16,[26][27][28][29] However, the amplitude of the reported negative MR ratio is smaller than −1% at room temperature in the case of pseudo-spin-valve current-perpendicular-to-plane (CPP)-GMR devices, indicating the small negative spin polarization of these materials. Considering that negative STT is beneficial to devices demanding strong STT, implementation of negative spin polarization in CPP-GMR devices is highly demanded for practical applications because their all-metallic structure can withstand higher current density than TMR devices.…”

Section: Introductionmentioning

confidence: 99%

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Suto,

Barwal,

Simalaotao

et al. 2024

Journal of Applied Physics

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Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperatures, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization.

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Section: Introductionmentioning

confidence: 99%

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Suto,

Barwal,

Simalaotao

et al. 2024

Journal of Applied Physics

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“…The GMR films were deposited on thermally oxidized Si substrates by magnetron sputtering and patterned into circular CPP-GMR devices by the procedure described in Ref. 28. The pillar area was 4.8 × 10 −3 μm 2 , as measured by scanning electron microscopy.…”

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Evaluation of spin-transfer-torque efficiency using magnetization reversal against a magnetic field: comparison of FeCr with negative spin polarization and NiFe

Suto¹,

Nakatani²,

Asam³

et al. 2023

Appl. Phys. Express

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We propose and demonstrate an experimental method to evaluate spin-transfer-torque (STT) efficiency in current-perpendicular-to-plane giant magnetoresistance devices, which utilizes STT-induced magnetization reversal against a perpendicular magnetic field. Using, this method, we estimated the STT efficiency of FeCr with negative spin polarization, which attracts attention in spintronics applications. In comparison with NiFe with positive spin polarization, the sign of the STT from FeCr was opposite, reflecting negative spin polarization. The STT efficiency of FeCr was approximately half that of NiFe at room temperature and surpassed that of NiFe at 50 K.

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Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection

Li,

Suto,

Barwal

et al. 2024

Acta Materialia

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Study on FeCr thin film for a spintronic material with negative spin polarization

Cited by 7 publications

References 46 publications

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Evaluation of spin-transfer-torque efficiency using magnetization reversal against a magnetic field: comparison of FeCr with negative spin polarization and NiFe

Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection

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