Study on growth characteristics of Ib-type diamond in an Fe–Ni–C–S system

Fang, Shuai; Ma, Hongan; Wang, Zhanke; Yang, Zhiqiang; Cai, Zhenghao; Ding, Luyao; Miao, Xiao; Chen, Liangchao; Jia, Xiaopeng

doi:10.1039/c9ce01194c

Cited by 32 publications

(3 citation statements)

References 40 publications

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“…Increasing pressure can increase the interaction between FeNi alloy and N atoms, thereby reducing the content of N atoms entering the lattice and directly affecting the N content inside diamond. [27,34] In addition, during HPHT experiments, doping is one of the methods that may be used to change the N content in diamonds. Si and N elements enter the diamond lattice together, forming Si-N bonds, resulting in a decrease in the N content of the lattice, and this was confirmed by the x-ray photoelectron spectroscopy (XPS) characterization.…”

Section: Ftir Characterizationmentioning

confidence: 99%

Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system: Effect of synthesis pressure

Liu

Wang

et al. 2023

Chinese Phys. B

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Pressure is one of the necessary conditions for diamond growth. Exploring the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of these diamonds to a high quality. This work reports the morphology, impurity content, and crystal quality characteristics of silicon-doped diamond crystals synthesized under different pressures. Fourier transform infrared spectroscopy shows that with the increase of pressure, the nitrogen content in the C-center inside the diamond crystal decreases. X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon powder. Raman spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamond from 1331.18 cm-1 to 1331.25 cm-1, resulting in a decrease in internal stress in the crystal. The half-peak width decreased from 5.41 cm-1 to 5.26 cm-1, and the crystallinity of the silicon-doped diamond crystals improved, resulting in improved quality. This work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds.

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Section: Ftir Characterizationmentioning

confidence: 99%

Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system: Effect of synthesis pressure

Liu

Wang

et al. 2023

Chinese Phys. B

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“…At the same time, the mechanism that limits incorporation of N atoms into the diamond structure is still unclear, although it is actively discussed by both geologists 19 and specialists in HPHT technology. 20 The understanding of the correlation between S and the state of N-defects is also complicated by the role of the fluid phase which always is present in the experiment chamber, 21 as well as in natural environments associated with diamond. 22 Summarizing the above, it is worth noting that studies of diamond growth in metal–carbon melts with low S additions are of the main interest, since at high S contents, the growth of single-crystal diamond becomes difficult.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the nitrogen state in HPHT diamonds grown in an Fe–C melt with a low sulfur addition

et al. 2022

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“…Since General Electric successfully synthesized diamond for the first time in 1955 using a high-pressure and high-temperature method, growth of diamond has attracted considerable interest due to the importance for machine tools, optical coatings, high-temperature electronics, and next-generation power devices. − Diamond has been synthesized by using metal catalysts, such as Fe, Co, and Ni; until recently, these transition metals were considered essential to catalytic diamond synthesis. − …”

Section: Introductionmentioning

confidence: 99%

Importance of Interfacial Structures in the Catalytic Effect of Transition Metals on Diamond Growth

et al. 2021

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Here, using ab initio calculations, we investigated the interaction between transition metals (M) and diamond C(111) surfaces. As a physical parameter describing the catalytic effect of a transition metal on diamond growth, we considered interfacial energy difference, ΔE int , between 1 × 1 and 2 × 1 models of M/C(111). The results showed that the transition-metal elements in the middle of the periodic table (groups 4−10) favor a 1 × 1 M/C(111) structure with diamond bulk-like interfaces, while the elements at the sides of the periodic table (groups 3, 11, and 12) favor a 2 × 1 M/C(111) structure with the 2 × 1 Pandey chain structure of C(111) underneath M. In addition, calculations of MC carbide formation for early transition metals (groups 3−6) showed that they have a tendency to form MC rather than M/C(111), which explains their low efficiency as catalysts for diamond growth. Further analysis suggests that ΔE int could serve as another parameter (catalytic descriptor) for describing catalytic diamond growth in addition to the conventional parameter of the melting temperature of M.

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Study on growth characteristics of Ib-type diamond in an Fe–Ni–C–S system

Abstract: FeS is the main sulfur-containing compound in natural diamond inclusions.

Cited by 32 publications

References 40 publications

Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system: Effect of synthesis pressure

Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system: Effect of synthesis pressure

Characterization of the nitrogen state in HPHT diamonds grown in an Fe–C melt with a low sulfur addition

Importance of Interfacial Structures in the Catalytic Effect of Transition Metals on Diamond Growth

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