Study on highly thermostable low‐k polymer films based on fluorene‐containing polyetherimides

Abstract

Highly thermostable low‐k polymer films with potential applications as dielectric materials in microelectronic industry were synthesized starting from 9,9‐bis[4‐(3,4‐dicarboxyphenoxy)phenyl]fluorene dianhydride and various diamines. A polyetherimide/silica nanocomposite film was obtained using methyltriethoxysilane as precursor of inorganic phase. The chemical structure was confirmed by FTIR and 1H NMR spectroscopy. Water vapor's sorption capacity, thermal stability, glass transition temperature, thermal diffusivity, specific heat, thermal conductivity, and dielectric characteristics of the films were determined. All the films exhibited excellent thermal stability, with an initial decomposition temperature in the range of 500–530°C. They showed low dielectric constant of 1.98–2.86 and low dielectric loss of 0.0037–0.011, at a frequency of 1 Hz and room temperature. The subglass γ‐ and β‐relaxations, primary α‐relaxation, and conductivity relaxation processes were discussed according to the chemical structure of the samples. Quantitative structure–property relationship (QSPR) study was conducted, and linear regression models were formulated to describe the causal relationships between different parameters and polyetherimide properties.

New Strategy for Inducing Surface Anisotropy in Polyimide Films for Nematics Orientation in Display Applications

“…Molecular modeling computations were performed to evaluate the conformational characteristics of the PIs. There are works in the literature that deal with the development of quantitative structure-property relationship models for different classes of the PIs which predict properties, such as the refractive index, glass transition temperatures, thermal conductivity, dielectric constant, or intrinsic viscosity in polymer-solvent mixtures [26][27][28][29]. Even in our case, with the help of the same method, effective information on the mechanical behavior of the polymers was obtained.…”

Imparting low dielectric constant and high toughness to polyimide via physical blending with trifluoropropyl polyhedral oligomeric silsesquioxane

“…[4] Another one is to design the molecular structure of PI, such as the introduction of fluorinated substituents for reducing the polarizability or the introduction of bulky side-groups for increasing the intrinsic free volume. [5][6][7] However, the methods above are prone to sacrifice the thermal and mechanical properties of PI while lowering the D k value. Recently, polyhedral oligomeric silsesquioxane (POSS) has gradually attracted more and more attention due to its well-defined nanostructure and unique dual nature.…”

Low Dielectric Constant and Anisotropic Mechanical Properties of Dispenser‐Printed Polyetherimide Films Using Two‐Step Thermal Treatment

“…[ 3–8 ] For example, a PEI film is used as a dielectric interlayer in various electronic devices to reduce signal transmission delay in chips, which is dependent on the dielectric constant. [ 5,9,10 ]…”

“…[3][4][5][6][7][8] For example, a PEI film is used as a dielectric interlayer in various electronic devices to reduce signal transmission delay in chips, which is dependent on the dielectric constant. [5,9,10] Most studies have fabricated PEI films using solvent casting or extrusion, which have advantages in terms of time reduction, convenience, and mass production. [9,11,12] However, these methods cannot precisely control the shape and thickness of the film and require additional processes.…”

“…[5,9,10] Most studies have fabricated PEI films using solvent casting or extrusion, which have advantages in terms of time reduction, convenience, and mass production. [9,11,12] However, these methods cannot precisely control the shape and thickness of the film and require additional processes. Considering that the electronic devices are becoming smaller and more integrated, novel material systems and facile methods are urgently required to address these issues.…”