Study on Hybrid Au&amp;#x2013;Underfill Resin Bonding Method With Lock-and-Key Structure for 3-D Integration

Nimura, Masatsugu; Mizuno, Jun; Shigetou, Akitsu; Sakuma, Katsuyuki; Ogino, Hirotaka; Enomoto, Tomoyuki; Shoji, Shuichi

doi:10.1109/tcpmt.2013.2240566

Cited by 13 publications

(6 citation statements)

References 9 publications

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“…In their approach, the resin was compressed by a silicon substrate coated with a release agent. The solder/adhesive and Au/ adhesive bonding were successfully implemented after this novel planarization process [58][59][60].…”

Section: Issues On Underfillmentioning

confidence: 99%

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Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Liu

Park

2014

Journal of Electronic Packaging

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Three-dimensional (3D) packaging with through-silicon-vias (TSVs) is an emerging technology featuring smaller package size, higher interconnection density, and better performance; 2.5D packaging using silicon interposers with TSVs is an incremental step toward 3D packaging. Formation of TSVs and interconnection between chips and/or wafers are two key enabling technologies for 3D and 2.5D packaging, and different interconnection methods in chip-to-chip, chip-to-wafer, and wafer-to-wafer schemes have been developed. This article reviews state-of-the-art interconnection technologies reported in recent technical papers. Issues such as bump formation, assembly/bonding process, as well as underfill dispensing in each interconnection type are discussed.

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Section: Issues On Underfillmentioning

confidence: 99%

“…In addition to forming interconnections with eutectic solder materials, the Cu-Cu [47,[68][69][70] or Au-Au [59,60] connection process with adhesive (also known as transfer-join process or TJ) has also been developed. IBM researchers fabricated joints with a mechanical lock-and-key structure using this process.…”

Section: With Simultaneous Underfillmentioning

confidence: 99%

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Liu

Park

2014

Journal of Electronic Packaging

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“…Extra-high stress is not required to break down native oxides to form direct Au-Au bonding [8,9]. Therefore, Au, in combination with Cu interconnections, is the optimum metal for direct bonding, compared to other alternatives including Al, Ni, Ti, and Pd [10][11][12][13][14][15].…”

Section: Fabricationmentioning

confidence: 99%

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

Wang

Smet

Kobayashi³

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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This paper reports the first design and demonstration of a manufacturable 20 µm pitch Cu interconnection technology to ultra-thin glass interposers. Bonding is accomplished at temperatures below 200 o C without the need for solders. Manufacturability challenges such as substrate warpage, bump noncoplanarity and assembly throughput with low bonding times are addressed with this technology. The modeling and experimental results indicate that the ultra-fine pitch Cu interconnection offsets more than 3 µm non-coplanarity. Bonding interfaces were characterized to show that metallurgical bonding microstructure is formed even with a bonding time of 5 seconds, with superior electrical properties. A mechanism for low-temperature metallurgical bonding is proposed based on the characterization results.

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“…This technical challenge attracted the interest of many research groups working on advanced packaging technology, to promote the development of higher-interconnectiondensity and higher-performance integration approaches. [5][6][7][8][9] Flip-chip bonding (FCB) (Fig. 2) is a promising technique for high density interconnection and heterogeneous integration.…”

Section: Introductionmentioning

confidence: 99%

“…Bumps on the chip are approached to the bonding pad surface, and appropriate bonding force is applied to induce the misalignment self-correction effect (3,4). Bonding conditions are applied to form reliable bonds (5). The chip is released and the bonding head is moved upward (6).…”

Section: Introductionmentioning

confidence: 99%

15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications

Thanh

Kato

Watanabe

et al. 2014

Jpn. J. Appl. Phys.

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In this paper, we report the development of reliable fine-pitch micro bump interconnections that used a high-precision room-temperature bonding approach. The accuracy of the bonding process is improved by modifying conventional bump/planar-bonding-pad interconnections to form self-aligned micro bumps/truncated inverted pyramid (TIP) bonding pads, i.e., misalignment self-correction elements (MSCEs). Thermosonic flip-chip bonding (FCB) is utilized to form reliable bonds between these MSCEs at acceptable low temperatures. By applying the proposed bonding approach, the demonstration of fine-pitch Cu bump to Au bonding pad interconnects chip stacking has been realized. Microstructure analyses reveal that 15-µm-pitch micro bump joints are fabricated at room temperature.

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Study on Hybrid Au–Underfill Resin Bonding Method With Lock-and-Key Structure for 3-D Integration

Cited by 13 publications

References 9 publications

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch

15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications

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Study on Hybrid Au&#x2013;Underfill Resin Bonding Method With Lock-and-Key Structure for 3-D Integration

Cited by 13 publications

References 9 publications

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Three-Dimensional and 2.5 Dimensional Interconnection Technology: State of the Art

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 &#x03BC;m pitch

15-µm-pitch Cu/Au interconnections relied on self-aligned low-temperature thermosonic flip-chip bonding technique for advanced chip stacking applications

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Product

Resources

About

Study on Hybrid Au–Underfill Resin Bonding Method With Lock-and-Key Structure for 3-D Integration

Modeling, design, and demonstration of low-temperature Cu interconnections to ultra-thin glass interposers at 20 μm pitch