2021
DOI: 10.3390/ma14237320
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Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Abstract: Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. To improve the precise machinability of single-crystal SiC wafer, this paper proposed a new hybrid process. Firstly, we developed an ultrasonic vibration-assisted d… Show more

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Cited by 3 publications
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