2011
DOI: 10.1002/pssc.201084160
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Study on photoemission mechanism for negative electron affinity GaN vacuum electron source

Abstract: The whole process including photoelectron excitation, transportation from bulk to surface and escape to vacuum by traversing surface barrier was analyzed in detail. Photoelectron excitation relates to the band structure of photocathode material and the absorption coefficient of the material. In the bulk of GaN photocathode, the photoelectrons mainly are transited into Γ valley first, when the energy is great enough, the photoelectrons can scatter into higher M‐L valley or A valley from Γ valley. The electrons … Show more

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Cited by 9 publications
(1 citation statement)
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“…In vacuum, this combination of properties is referred to as negative electron affinity (NEA). An important property of NEA materials is that the efficiency of electron emission increases greatly compared with materials having positive electron affinity. While many materials exhibiting NEA are known, ,, the vast majority are highly reactive with water, making them unsuitable for intentional creation of solvated electrons by photoelectrochemical processes.…”
Section: Introductionmentioning
confidence: 99%
“…In vacuum, this combination of properties is referred to as negative electron affinity (NEA). An important property of NEA materials is that the efficiency of electron emission increases greatly compared with materials having positive electron affinity. While many materials exhibiting NEA are known, ,, the vast majority are highly reactive with water, making them unsuitable for intentional creation of solvated electrons by photoelectrochemical processes.…”
Section: Introductionmentioning
confidence: 99%