Study on Reducing the Energy Barrier Between an Electrode and an Organic Semiconductor by Using Inorganic Semiconductor Layer in Organic Thin Film Transistors

Jee, Seung Hyun; Kim, Soo Ho; Lee, Kwang Hoon; Ko, Jae Hwan; Yoon, Young Soo

doi:10.3938/jkps.50.915

Cited by 3 publications

(1 citation statement)

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“…In fact, in the last years, lots of efforts have been made improving organic thin film transistors (OTFTs) and organic photovoltaic cells (OPCs): in the first, the researchers have used advanced materials to create electrodes such as metal oxide/metal structures, 18 InSb layer 19 and patterned polypyrrole, 20 while for OPC the effect of contacts with graphene, 21,22 carbon nanotubes, 23 and Al 2 O 3 buffer layers 24 has been studied. allowed to study the influence of the metal work function on the cathode barrier.…”

Section: Resultsmentioning

confidence: 99%

Analysis of pinning effect at the Alq3/metal interface in organic light emitting diodes

Petrosino

Rubino

2012

Journal of Applied Physics

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In order to study the improvement of electrons injection in organic light emitting diodes (OLEDs), we have realized ITO/PEDOT/PF6/Alq3/cathode OLEDs with four different metallic electrodes: Ca, Mg, Al, and Ag. The cathode barrier increment/decrement has been estimated between the four kinds of devices by using the thermionic injection theory. These results have allowed to see a very low dependence of the cathode barrier on the metal work function, explained in terms of pinning at the cathode interface. The authors propose that this pinning effect is due to the presence of a distribution of states at the Alq3/metal interface; the application of the Cowley-Sze model has returned a density of states of about 6 × 1014 eV−1 cm−2, high value satisfying the observed independence of the cathode barrier on the employed metallic electrodes.

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Section: Resultsmentioning

confidence: 99%

Analysis of pinning effect at the Alq3/metal interface in organic light emitting diodes

Petrosino

Rubino

2012

Journal of Applied Physics

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Surface analytical studies of interfaces in organic semiconductor devices

Gao

2010

Materials Science and Engineering: R: Reports

230

140

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Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode

Jee

Kakati

Lee

et al. 2011

Applied Physics Letters

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The surface of the ZnO thin films was modified by a thin InSb layer by using a thermal evaporator to increase the work function without altering the physical properties of the film. We expected that the InSb thin layer with a high work function could achieve the Ohmic contact between the ZnO and Pt electrodes by reducing an energy barrier due to increase in the ZnO thin film. The Ohmic contact was achieved in the interface between the ZnO and Pt electrodes by the InSb thin layer.

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Study on Reducing the Energy Barrier Between an Electrode and an Organic Semiconductor by Using Inorganic Semiconductor Layer in Organic Thin Film Transistors

Cited by 3 publications

References 0 publications

Analysis of pinning effect at the Alq3/metal interface in organic light emitting diodes

Analysis of pinning effect at the Alq3/metal interface in organic light emitting diodes

Surface analytical studies of interfaces in organic semiconductor devices

Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode

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