Study on sapphire microstructure processing technology based on wet etching

Abstract

Aiming at the problem that sapphire surface roughness is quite large after wet etching in sapphire microstructure processing technology, we optimize the wet etching process parameters, study on the influences of concentration and temperature of etching solution and etching time on the sapphire surface roughness and etching rate, choose different process parameters for the experiment and test and analyze the sapphire results after wet etching. Aiming at test results, we also optimize the process parameters and do experiment. Experimental results show that, after optimizing the parameters of etching solution, surface roughness of etched sapphire is 0.39 nm, effectively with reduced surface roughness, improved light extraction efficiency and meeting the production requirements of high-precision optical pressure sensor.

Surface characterization of patterning on MgO single crystals using wet chemical etching process to advance MEMS devices

“…When the temperature and concentration of the etching solution are fixed, apart from a short initial period, the etching rate is independent of time [27]. Therefore, the etching time can be set flexibly, provided it is not too short.…”

Wet etching in β-Ga2O3 bulk single crystals

“…After etching, such defects are presented as etch pits with different shapes due to the existence of a high distortion energy in this area. 37–39 The etching behavior is generally determined by the rate-limiting step, including diffusion and chemical-reaction limited processes.…”

Application of the evolutionary kinetic Monte Carlo method for the simulation of anisotropic wet etching of sapphire

“…The wet etching of sapphire is used widely in the microelectro-mechanical systems (MEMS) owing to its advantages such as high hardness, good wearability and high stability [1][2][3][4][5][6]. In particular, the lighting performance of GaN-based LEDs can be improved by processing periodic microstructures on the sapphire substrates [7][8][9][10][11][12].…”