2012
DOI: 10.7567/jjap.51.08hd01
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Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

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Cited by 6 publications
(3 citation statements)
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“…We controlled the electron and ion density profiles in the azimuthal direction by changing the position of the virtual ground. In addition to RF plasma, studies have been conducted to improve plasma uniformity in microwave plasma through matrix configuration ICP [35], whistler wave refraction [36], and electron cyclotron resonance position adjustment [37].…”
Section: Introductionmentioning
confidence: 99%
“…We controlled the electron and ion density profiles in the azimuthal direction by changing the position of the virtual ground. In addition to RF plasma, studies have been conducted to improve plasma uniformity in microwave plasma through matrix configuration ICP [35], whistler wave refraction [36], and electron cyclotron resonance position adjustment [37].…”
Section: Introductionmentioning
confidence: 99%
“…Maeda et al reported the development of an ECR etching reactor for a 450 mm diameter wafer. 21) They measured plasma distribution in the ECR reactor by a movable single probe and found a highdensity plasma column along the static magnetic field on the wafer electrode with an outer low-density region. They found a ring-shaped plasma generation region on the side surface of the plasma column, and the plasma density was very uniform along the radial direction in the plasma column.…”
Section: (3) Low Wall Damagementioning
confidence: 99%
“…Maeda et al reported that the plasma density uniformity was controlled by the magnetic field in an ECR plasma etcher. 43) Kim et al reported that the etching mask materials affected the polymer deposition performance; for instance, an amorphous carbon mask improved deposition as compared with amorphous silicon masks. 44) Matsui et al reported that dissociation of large-mass fluorocarbon molecules was suppressed by low-pressure pulsed plasma, leading to high-selectivity etching due to control of polymer deposition.…”
Section: Har Feature Profile Control: From Two Dimensions To Three Di...mentioning
confidence: 99%