Study on the influence of residual stress on the mechanical characteristics of free-standing Si-membranes processed by deep reactive ion etching

Boominathasellarajan, S.; Saravanan, P.; Pandey, K. K.; Srihari, Velaga; Poswal, H. K.

doi:10.1016/j.sna.2019.02.034

Cited by 6 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For devices based on SOI-MEMS technology, the residual stress primarily arises from two sources: residual stress in the SOI wafer and residual stress formed during the processing of MEMS devices. While previous research has focused on residual stress in thin layers [ 2 , 3 , 4 , 5 ], or residual stress generated during processing [ 6 , 7 , 8 , 9 ], there is limited research on the residual stress in SOI chips themselves.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Residual Stress in SOI Wafers by Using MEMS Cantilever Beams

et al. 2023

View full text Add to dashboard Cite

Silicon-on-insulator (SOI) wafers are crucial raw materials in the manufacturing process of microelectromechanical systems (MEMS). Residual stresses generated inside the wafers during the fabrication process can seriously affect the performance, reliability, and yield of MEMS devices. In this paper, a low-cost method based on mechanical modeling is proposed to characterize the residual stresses in SOI wafers in order to calculate the residual stress values based on the deformation of the beams. Based on this method, the residual strain of the MEMS beam, and thus the residual stress in the SOI wafer, were experimentally determined. The results were also compared with the residual stress results calculated from the deflection of the rotating beam to demonstrate the validity of the results obtained by this method. This method provides valuable theoretical reference and data support for the design and optimization of devices based on SOI-MEMS technology. It provides a lower-cost solution for the residual stress measurement technique, making it available for a wide range of applications.

show abstract