2016
DOI: 10.1016/j.apsusc.2016.02.032
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Study on the machined depth when nanoscratching on 6H-SiC using Berkovich indenter: Modelling and experimental study

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Cited by 64 publications
(16 citation statements)
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“…Researches have revealed that nanoscratching of hard-brittle materials is a complex process with multiple influencing factors, including scratch speed [6][7][8], shape and geometric parameters of tool [9,10], environment [11], and so on. In addition, many scholars have conducted studies to explore the effect of scratch directions in the processing of materials [12][13][14][15][16]. Yan investigated the material removal state under different scratch directions employing AFM on single crystal copper, it is found that the height of pile-up is greatly influenced by scratch directions [17].…”
Section: Introductionmentioning
confidence: 99%
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“…Researches have revealed that nanoscratching of hard-brittle materials is a complex process with multiple influencing factors, including scratch speed [6][7][8], shape and geometric parameters of tool [9,10], environment [11], and so on. In addition, many scholars have conducted studies to explore the effect of scratch directions in the processing of materials [12][13][14][15][16]. Yan investigated the material removal state under different scratch directions employing AFM on single crystal copper, it is found that the height of pile-up is greatly influenced by scratch directions [17].…”
Section: Introductionmentioning
confidence: 99%
“…Zhang carried out the varied-cutting-depth nanoscratching experiments on 6H-SiC using the Berkovich indenter, in which the material removal behavior during scratching was found to be affected by scratch directions. The author also found that the ductile-removal mode takes place during the nanoscratching process [16]. Only a few studies have considered the effect of scratch direction on scratching characteristics [16], but the understanding is still limited.…”
Section: Introductionmentioning
confidence: 99%
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“…Zhang et al [11] performed nano-scratch tests on 6H-SiC and found the brittle-ductile transition's critical depth is around 75 nm when the applied normal load is about 12.2 mN. They also built a simulation model to reveal the relationship between the applied normal load and machined depth [12]. However, such results are mostly suitable for specific single crystal and basal plane.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon carbide (SiC) is a kind of nonoxide ceramic with superior properties like high thermal stability, low coefficient of thermal expansion, good wear resistance, and excellent resistance to chemical corrosion . When filled in polymer matrices, a substantial increase of the mechanical properties, wear resistance, and thermal conductivity would be achieved , leading to wide industrial applications in the electronics, chemical, mechanical, aerospace, nuclear power areas . For example, SiC particles reduce the crystallinity of linear low‐density polyethylene (LLDPE) and improved thermal stability and thermal conductivity of the resulting composites .…”
Section: Introductionmentioning
confidence: 99%