Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

Wang, Shengkai; Sun, Xianwen; Guang-hui, LI; Jia, Caihong; Li, Guoqiang; Zhang, Weifeng

doi:10.1186/s11671-018-2433-5

Cited by 10 publications

(5 citation statements)

References 30 publications

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“…In addition to serving as the buffer layer for on-silicon epitaxial growth of other functional oxide thin films, STO enables the device functionality (i.e., ON/OFF switching) by its unique memristive characteristics (see the Supplementary Information for measured current-voltage hysteretic curves of the STO thin film). Similar memristive behaviors have already been reported for doped STO and other organic-inorganic hybrid perovskite oxide materials 31,32 . It has been well understood that (1) stress can facilitate spontaneous formation of oxygen vacancies inside a complex transition-metal oxide system by tuning the oxygen vacancy formation energy 33 , and (2) conductance of a memristive device is directly dictated by oxygen vacancy concentration inside the oxide thin film 34 .…”

Section: Discussionsupporting

confidence: 85%

Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

Anam

Gopalakrishnan

Sebastian

et al. 2020

Sci Rep

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the possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for electrostrictive fet applications typically adopt approaches that are entirely theoretical and simulative, thus lacking practical insights into how an electrostrictive material can be best interfaced with a channel material. Here we propose an electrostrictive FET device, involving the epitaxial oxide heterostructure as an ideal material platform for maximum strain transfer. The ON/ off switching occurs due to a stress-induced concentration change of oxygen vacancies in the memristive oxide channel layer. Based on finite-element simulations, we show that the application of a minimal gate voltage bias can induce stress in the channel layer as high as 10 8 N/m 2 owing to the epitaxial interface between the electrostrictive and memristive oxide layers. conductive AfM experiments further support the feasibility of the proposed device by demonstrating the stressinduced conductivity modulation of a perovskite oxide thin film, SrTiO 3 , that is well known to serve as the substrate for epitaxial growth of other functional oxide layers.

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Section: Discussionsupporting

confidence: 85%

Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

Anam

Gopalakrishnan

Sebastian

et al. 2020

Sci Rep

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“…Emerging non-volatile memories provide a new computing paradigm due to their scalability (down to sub-10 nm feature sizes), speed and energy-efficiency performances, and ability to implement machine learning by hardware. In one previous study (26), the Nd-doped STO sandwiched between Pt and In contact electrodes already exhibited the resistive switching behavior. The…”

Section: Electrothermal Couplingmentioning

confidence: 84%

Perovskite Oxides Tunable by Electromechanical and Electrothermal Couplings

Gopalakrishnan¹,

Sebastian²,

Ahn³

2020

ECS Trans.

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Perovskite oxide thin films is an attractive material group due to their unique multi-functionalities. To broaden the impact of perovskite oxides to practical electronic device applications, their electrical properties will need to be tunable by external means. In this work, we show that electrical conductivity of perovskite STO (SrTiO3) thin films can be largely tuned by mechanical stress (electromechanical coupling) and thermal annealing (electrothermal coupling). The conductive atomic force microscope setup was carefully calibrated to enable precise measurements of electrical response upon application of varying forces, resulting in a high electromechanical coupling sensitivity of up to ~1,000 Sm-1MPa-1. The thermal annealing study also suggests that electrical conductivity of STO is strongly affected by the ambient temperature due to the varying amount of oxygen vacancies.

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“…These methods allow us to accurately characterize silver nanoparticles and study their properties. The use of physical methods for the synthesis and characterization of silver nanoparticles can be of special importance due to their speed and minimal use of chemical substances, providing various applications in fields such as medicine, healthcare, and industry [61] . However, physical synthesis methods have some drawbacks, including high energy consumption, wide particle size distribution, and low efficiency [62] .…”

Section: Synthesismentioning

confidence: 99%

Silver Nanoparticles as Antiviral and Antibacterial Agents: A Comprehensive Review of Synthesis Methods and Therapeutic Application

Sabaghian

2024

ChemistrySelect

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Silver nanoparticles have shown inhibitory capabilities and its use in battling viral infections are strengthened by its potent antibacterial activity. Notably, since it directly affects antiviral efficacy, the proper choice of synthesis process for making silver nanoparticles is a vital element to be taken into consideration. The synthesis of silver nanoparticles for the treatment of viral and bacterial infections involves creating silver particles at the nanoscale with unique antimicrobial properties. Various methods exist for synthesizing silver nanoparticles, including chemical reduction, green synthesis, and physical methods. Chemical reduction involves using reducing agents to convert silver ions into silver nanoparticles. Green synthesis employs reducing agents in an environmentally friendly manner. Physical methods rely on techniques such as laser ablation or thermal evaporation to produce silver nanoparticles. In order to provide technological guidance for choosing antiviral silver nanoparticle manufacturing methods, this paper introduces and explores alternative synthesis methods for creating silver nanoparticles.

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Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

Cited by 10 publications

References 30 publications

Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

Perovskite Oxides Tunable by Electromechanical and Electrothermal Couplings

Silver Nanoparticles as Antiviral and Antibacterial Agents: A Comprehensive Review of Synthesis Methods and Therapeutic Application

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