Study on the Performance of Superlattice-Like Thin Film V₂O₅/Sb in Phase Change Memory

Abstract

Compared with Sb film, V2O5/Sb superlattice-like thin film has better thermal stability (T c ∼ 240 °C, T 10-year ∼ 172.9 °C). V2O5/Sb thin film is suppressed by the multiple interfaces and the grains become smaller. The vibrational peaks of Sb-Sb and V–O bonds are observed by Raman measurement. The interaction between the two crystal systems improves the stability of the V2O5/Sb membrane. The multilayer structures before and after crystallization were observed by transmission electron microscopy. The ultralow-power (2.25 × 10−12 J) and ultrafast-speed (8 ns) has been achieved for V2O5(1 nm)/Sb(9 nm)-based phase change memory device.

Performance Improvement of Sb Phase Change Thin Film by Y Doping

“…where t, τ, E a , k b , and T were failure time, the pre-exponential factor depending on the material's properties, the activation energy of crystallization, Boltzmann's constant and absolute temperature of concern, 29 respectively. As seen from Fig.…”

“…where R, K and S, the reflectance, the absorption coefficient and the scattering coefficient. 29 In the K-M function graph, the energy band gap value E g is defined as the intercept between the fitting line extension of the linear part of the curve and the energy axis. The E g of Sb, Sb 73 Y 27 and Sb 51 Y 49 were deduced to be about 0.56, 0.57 and 0.59 eV, respectively.…”

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

“…This can be explained by the absence of Ge and tetrahedral defects in Sb 2 Te 3 as well as the limited structural relaxation in the heterostructure. Recently, SLL structures with other compositions have also been investigated including such as V 2 O 5 /Sb, GeTe–Bi 4 Te 3 , and much more.…”