2007
DOI: 10.1016/j.ssc.2007.06.006
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Study on the resistive switching properties of epitaxial La0.67Sr0.33MnO3 films

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Cited by 11 publications
(5 citation statements)
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“…The Co contact itself is a possible candidate, however, nothing indicates a contribution from this side while we know that the LSMO contact can exhibit resistive switching. [13][14][15][16] In addition RS in oxides has often been described [17][18][19][20][21] while for metallic cobalt RS has not been reported. Modification of conducting filaments in the Alq3 can be excluded because we already know that the MR is based on tunneling.…”
Section: Resistive Switching and Voltage Induced Modulation Of Tunnel...mentioning
confidence: 99%
“…The Co contact itself is a possible candidate, however, nothing indicates a contribution from this side while we know that the LSMO contact can exhibit resistive switching. [13][14][15][16] In addition RS in oxides has often been described [17][18][19][20][21] while for metallic cobalt RS has not been reported. Modification of conducting filaments in the Alq3 can be excluded because we already know that the MR is based on tunneling.…”
Section: Resistive Switching and Voltage Induced Modulation Of Tunnel...mentioning
confidence: 99%
“…In recent years, resistive switching in simple binary transition metal oxide (TMO) thin films, such as NiO and TiO 2 , attracts great interests for possible applications in nonvolatile memory devices [2][3][4][5][6][7][8][9][10][11][12][13][14]. Compared to more complex materials such as Pr 1−x Ca x MnO 3 [15,16], La 1−x Ca x MnO 3 [17] or Cr-doped SrZrO 3 [18], these simple binary oxide TMO materials exhibit advantages not only in their relative simple fabrication process, but also in their compatibility with CMOS processes. As for switching mechanism, many studies attributed it to filament conduction theory which is closely related to the formation and rupture of conducting filaments [6,9].…”
Section: Introductionmentioning
confidence: 99%
“…This stability ensures the reliability and longevity of devices incorporating LSMO components. Hence, the unique combination of electronic, magnetic, and structural properties, along with a wide range of tunability, compatibility, and stability, provides advantages and makes it a suitable candidate for the field of memory device applications. Recently, Sawa et al studied the DRS behavior in an LSMO film by incorporating the Sm 0.7 Ca 0.3 MnO 3 layer . In another report, Liu et al investigated the temperature and compliance current-dependent volatile RS behaviors in LSMO films .…”
Section: Introductionmentioning
confidence: 99%