Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films

Serényi, Miklós; Betko, J.; Nemcsics, Ákos; Basa, D. K.; Morvič, M.

doi:10.1016/j.microrel.2005.02.008

Cited by 2 publications

(3 citation statements)

References 18 publications

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“…Various low temperature schemes have been adapted to prepare a-Si 1-x Ge x films. They include low-power radio frequency (RF), direct current, electron cyclotron resonance and very high frequency plasma-enhanced chemmical vapor deposition [6,7], and RF sputtering [8]. However, these methods yield low growth rate.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Pethuraja¹,

Welser²,

Sood³

et al. 2012

MSA

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We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response

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Section: Introductionmentioning

confidence: 99%

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Pethuraja¹,

Welser²,

Sood³

et al. 2012

MSA

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“…By alloying hydrogenated amorphous silicon (aSi:H) with Ge, it is possible to decrease the band gap and thus improving the long wavelength response of the solar cells [1][2][3][4][5][6][7][8]. Accordingly, a-SiGe:H films are of current interest for the development of high efficiency tandem solar cell structure [1]. This is because the band gap of aSiGe:H can be tuned within a wide range of values, much lower than the a-Si:H, by the controlled incorporation of germanium [1].…”

mentioning

confidence: 99%

“…Accordingly, a-SiGe:H films are of current interest for the development of high efficiency tandem solar cell structure [1]. This is because the band gap of aSiGe:H can be tuned within a wide range of values, much lower than the a-Si:H, by the controlled incorporation of germanium [1]. Recently, the application of SiGe:H films in micro-and nano-electromechanical systems (MEMS, NEMS) is intensively investigated due to their superior electrical, mechanical and thermal properties enabling locally tuning the physical properties of this material [4].…”

mentioning

confidence: 99%

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C

Sládek

Buršı́ková

Šťahel

2010

Phys. Status Solidi (c)

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In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, we performed a comparative study on samples deposited under different plasma conditions. With variation of the pressure, we were able to change the structure of SiGe:H films. We have used the combination of the infrared spectroscopy, CPM, PDS and thermal desorption measurements to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested by depth sensing indentation technique. The results showing a different hydrogen bonding with the change of deposition conditions are interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films

Cited by 2 publications

References 18 publications

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

Structural and defect changes of hydrogenated SiGe films due to annealing up to 600°C

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