Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

Kim, Jun Gyu; Choi, You Youl; Choi, Doo Jin; Choi, Soon‐Mok

doi:10.1007/s11664-011-1589-x

Cited by 8 publications

(5 citation statements)

References 16 publications

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“…Besides borides, another group of materials which has been investigated for the use as high temperature thermoelectric applications due to their good thermal stability are carbides [938][939][940][941][942][943][944][945][946][947][948][949][950][951]. Efforts have been focused on the compound SiC which exists in several different modifications, the most prominent being the hexagonal 6-H α-SiC [938,939,947] and the cubic 3-C β-SiC [938,939,[944][945][946][948][949][950]. Depending on the synthesis conditions both p-type and n-type behavior have been reported.…”

Section: Boride and Carbide Thermoelectricsmentioning

confidence: 99%

Key properties of inorganic thermoelectric materials—tables (version 1)

et al. 2022

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This paper presents tables of key thermoelectric properties, which define thermoelectric conversion efficiency, for a wide range of inorganic materials. The 12 families of materials included in these tables are primarily selected on the basis of well established, internationally-recognised performance and their promise for current and future applications: Tellurides, Skutterudites, Half Heuslers, Zintls, Mg-Sb Antimonides, Clathrates, FeGa3–type materials, Actinides and Lanthanides, Oxides, Sulfides, Selenides, Silicides, Borides and Carbides. As thermoelectric properties vary with temperature, data are presented at room temperature to enable ready comparison, and also at a higher temperature appropriate to peak performance. An individual table of data and commentary are provided for each family of materials plus source references for all the data.

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Section: Boride and Carbide Thermoelectricsmentioning

confidence: 99%

Key properties of inorganic thermoelectric materials—tables (version 1)

et al. 2022

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“…Interestingly, they evidenced a huge reduction in thermal conductivity of more than an order of magnitude when compared to pristine graphene because of the mass fluctuation scattering of phonons (see figure 20(c)) due to a huge mass difference between the host C atom and the substituted Si atom. Also, on the study on effect of inert gases on the thermoelectric performance, SiC deposited with He gas had numerous pores and larger carbon content with higher Seebeck coefficient and lower thermal conductivity when compared to the ones deposited with H 2 and N 2 gas [528]. Nevertheless, metal organic chemical vapour deposition (MOCVD) is the most frequent approach for producing Bi 2 Te 3 /Sb 2 Te 3 superlattices, and it shows tremendous promise in the field of thin film creation because of the abundance of Te organometallic precursors and low breaking temperatures [529].…”

Section: Chemical Vapour Depositionmentioning

confidence: 99%

Physics and technology of thermoelectric materials and devices

Dadhich

Saminathan

Kumari

et al. 2023

J. Phys. D: Appl. Phys.

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The continuous depletion of fossil fuels and the increasing demand for eco-friendly and sustainable energy sources have prompted researchers to look for alternative energy sources. The loss of thermal energy in heat engines (100-350 ºC), coal-based thermal plants (150-700 ºC), heated water pumping in the geothermal process (150-700 ºC), and burning of petrol in the automobiles (150-250 ºC) in form of untapped waste-heat can be directly and/or reversibly converted into usable electricity by means of charge carriers (electrons or holes) as moving fluids using thermoelectric (TE) technology, which works based on typical Seebeck effect. The enhancement in TE conversion efficiency has been a key challenge because of the coupled relation between thermal and electrical transport of charge carriers in a given material. In this review, we have deliberated the physical concepts governing the materials to device performance as well as key challenges for enhancing the TE performance. Moreover, the role of crystal structure in the form of chemical bonding, crystal symmetry, order-disorder and phase transition on charge carrier transport in the material has been explored. Further, this review has also emphasized some insights on various approaches employed recently to improve the TE performance, such as, (i). carrier engineering via band engineering, low dimensional effects, and energy filtering effects and (ii). Phonon engineering via doping/alloying, nano-structuring, embedding secondary phases in the matrix and microstructural engineering. Wehave also briefed the importance of magnetic elements on thermoelectric properties of the selected materials and spin Seebeck effect. Furthermore, the design and fabrication of TE modules and their major challenges are also discussed. As, thermoelectric figure of merit, zT does not have any theoretical limitation, an ideal high performance thermoelectric device should consist of low-cost, eco-friendly, efficient, n- or p-type materials that operate at wide- temperature range and similar coefficients of thermal expansion, suitable contact materials, less electrical/ thermal losses and constant source of thermal energy. Overall, this review provides the recent physical concepts adopted and fabrication procedures of TE materials and device so as to improve the fundamental understanding and to develop a promising TE device.

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“…Furthermore, it is expected to become an application material in the field of thermoelectric power at high temperatures. [8][9][10][11] In these fields, the thermal conduction properties are usually considered critical metrics for evaluating the performance of SiC materials. High thermal conductivity is conducive to rapid heat transfer, while low thermal conductivity is conducive to improving the thermoelectric properties of the material.…”

Section: Introductionmentioning

confidence: 99%

Unveiling phonon frequency-dependent mechanism of heat transport across stacking fault in silicon carbide

et al. 2023

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Stacking faults (SFs) are often present in silicon carbide (SiC) and affect its thermal and heat-transport properties. However, it is unclear how SFs influence thermal transport. Using non-equilibrium molecular dynamics and lattice dynamics simulations, we studied phonon transport in SiC materials with a SF. Compared to perfect SiC materials, the SF can reduce thermal conductivity. This is caused by the additional interface thermal resistance (ITR) of SF, which is difficult to capture by the previous phenomenological models. By analyzing the spectral heat flux, we find that SF reduces the contribution of low-frequency (7.5-12 THz) phonons to the heat flux, which can be attributed to SF reducing the phonon lifetime and group velocity, especially in the low-frequency range. The SF hinders phonon transport and results in an effective interface thermal resistance around the SF. Our results provide insight into the microscopic mechanism of the effect of defects on heat transport and have guiding significance for the regulation of the thermal conductivity of materials.

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Study on the Thermoelectric Properties of CVD SiC Deposited with Inert Gases

Cited by 8 publications

References 16 publications

Key properties of inorganic thermoelectric materials—tables (version 1)

Key properties of inorganic thermoelectric materials—tables (version 1)

Physics and technology of thermoelectric materials and devices

Unveiling phonon frequency-dependent mechanism of heat transport across stacking fault in silicon carbide

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