Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Du, Jiangfeng; Chen, Nanting; Jiang, Zhiguang; Bai, Zhiyuan; Liu, Yong; Liu, Yang; Yu, Qin

doi:10.1016/j.sse.2015.10.008

Cited by 16 publications

(9 citation statements)

References 17 publications

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“…Measurement was performed in a temperature range between 25 and 150˝C using a heated plate and an ATT Systems A150 temperature controller. (e.g., [14,17,20,21]) and between 0.71 and 0.82 eV (e.g., [1,9,19,[22][23][24]) were the most commonly reported. Unfortunately, their origin remains ambiguous.…”

Section: Methodsmentioning

confidence: 99%

“…To circumvent the limitation, experiments on large-area Schottky diodes (SDs) can be performed [13,14], provided different electric field distribution between HFETs and SDs are considered. Other commonly used methods are based on the measurement of frequency-dependent conductance [15], low-frequency noise [16], transconductance non-linearity [17], and capacitance-voltage characterization concerning hysteresis [18]. As an extension of the current-mode DLTS, current-transient analysis utilizing a multiexponential decay fitting was also proposed [19].…”

Section: Introductionmentioning

confidence: 99%

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Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150˝C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data was achieved. The activation energy of dominant traps in the investigated structures was found to be within 0.77-0.83 eV. This nearly identical activation energy was obtained from current transients measured at a reverse bias of´6 V as well as at a forward bias of+1 V. It indicates that the dominant traps might be attributed to defects mainly associated with dislocations connected predominantly with the GaN buffer near the AlGaN/GaN interface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

et al. 2016

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“…The negligible hysteresis of recessed gate device without fluorine treatment was achieved (Figure 3b,d However, the gm of the 7-nm recess + CF4 device decreased sharply after maximum value in comparison with other devices. It is attributed to the electron trap in the AlGaN barrier under the gate region by the fluorine treatment [18]. The 7-nm recess + CF4 device shows hysteresis and it depends on the VD, as shown in Figure 3a.…”

Section: Resultsmentioning

confidence: 96%

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

et al. 2020

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An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.

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“…Du et al reported that acceptor-like trap (electron trap) in AlGaN barrier under the gate deteriorates the linear behavior of g m . 11 Thus, it is concluded that this phenomenon in SR/F is caused by the plasma damage, which generates electron trapping center. Note that, gate leakage current of all devices is as low as 69 μA/mm in the entire gate sweep range, attributed to the good insulating property of Al 2 O 3 dielectric (not shown here).…”

Section: Resultsmentioning

confidence: 99%

DC and RF Characteristics of Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess

Jung

Chang

et al. 2018

ECS J. Solid State Sci. Technol.

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Enhancement-mode (E-mode) Al 2 O 3 /AlGaN/GaN MISHEMTs were fabricated by shallow recess combined with CF 4 plasma treatment (SR/F) and deep recess (DR) to compare the effect of each process technique on the device performance. To prevent the device performance degradation induced by plasma damage during gate recess, the digital etch technique was employed. The fabricated E-mode devices have positively shifted threshold voltage, and exhibit lower transconductance (g m ) and saturation drain current than depletion-mode devices. Due to the CF 4 plasma damage during F-treatment, SR/F shows a sharp drop of g m curve and low saturation drain current. In contrast, DR presents broad g m and high saturation drain current. It is also revealed that the digital etch for gate recess exhibits an isotropic etch profile, consequently increasing the on-resistance. There is no remarkable difference between SR/F and DR in f T and f max , but DR has a better linearity over SR/F owing to the absence of plasma damage during F-treatment. This results reveal that the DR using digital etch is promising technique to obtain the high performance E-mode MISHEMTs compared to the F-treatment.

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Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Cited by 16 publications

References 17 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

DC and RF Characteristics of Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess

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Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate

Cited by 16 publications

References 17 publications

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess

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DC and RF Characteristics of Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess