Studying submicron voids in pyroboroncarbon with the focused ion beam technique

Simulation of material sputtering with a focused ion beam

“…This technology is finding increasing application for the creation and modification of micro and nanostructures [1, 2], formation and anal ysis of separate transverse sections (e.g., ion integrated circuits) and series of such sections for three dimen sional imaging of inhomogeneous material (FIB tomography) [3,4], and preparation of samples for transmission electron microscopy [5,6].The rapid progress of the FIB method and its numerous applications are prompting investigations aimed at detailed description of the interaction between incident ions and a target material and the development of approaches to quantitative simulation of micro and nanostructures formed by FIBs. For example, calculations based on simple models assumed that the depth of craters formed by FIBs was linearly dependent on the ion dose [7].…”

“…This technology is finding increasing application for the creation and modification of micro and nanostructures [1,2], formation and anal ysis of separate transverse sections (e.g., ion integrated circuits) and series of such sections for three dimen sional imaging of inhomogeneous material (FIB tomography) [3,4], and preparation of samples for transmission electron microscopy [5,6].…”

“…(3) is performed over the entire region of interaction of the incident beam and sample. The velocity of normal displacement of a surface element under the effect of an FIB can be written as follows: (4) where n is the density of atoms in the sample and γ is the "sticking" coefficient determining the fraction of atoms deposited onto element dS from the total num ber of sputtered atoms redeposited onto the surface. Following [9], we adopted γ = 1.…”