Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect

Takei, Ryohei; Manako, Shoko; Omoda, Emiko; Sakakibara, Youichi; Mori, Masahiko; Kamei, Toshihiro

doi:10.1364/oe.22.004779

Cited by 40 publications

(28 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…While most Si photonics foundry processes to date utilize crystalline Si as a waveguiding layer, deposited amorphous materials offer several advantages such as low-propagation-loss amorphous silicon (a-Si) [25,26] as well as SiN waveguides [24,27], a wide variety of indices of refraction, lower loss and crosstalk in waveguide crossings [27], and 3D layering [27][28][29][30]. A schematic of the layers used in this process is shown in Fig.…”

Section: Fabrication and Passive Devicesmentioning

confidence: 99%

Room-temperature-deposited dielectrics and superconductors for integrated photonics

Shainline¹,

Buckley²,

Nader³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 • C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.

show abstract

Section: Fabrication and Passive Devicesmentioning

confidence: 99%

Room-temperature-deposited dielectrics and superconductors for integrated photonics

Shainline¹,

Buckley²,

Nader³

et al. 2017

Opt. Express

View full text Add to dashboard Cite

show abstract

“…We measured the sub-gap absorption coefficient of a 1-μm-thick a-Si:H film deposited at 250°C [17]. A highly sensitive measurement technique is required to do this because a well-passivated a-Si:H film has low absorption.…”

Section: Low-loss A-si:h Waveguide 21 High-quality A-si:hmentioning

confidence: 99%

“…Nanophotonic waveguides with a core made of our low-absorption a-Si:H films were fabricated and their propagation losses were evaluated [17]. Two types of waveguides were tested: one composed of 420-nm-wide wires and another with 780-nm-wide ridges.…”

Section: Waveguide Fabricationmentioning

confidence: 99%

Amorphous Silicon Photonics

Takei¹

2016

Crystalline and Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

This chapter introduces our research on amorphous silicon photonics. By exploring our high-quality silicon thin-film technology, we have demonstrated hydrogenated amorphous silicon (a-Si:H) waveguides with ultra-low-loss, vertical interlayer transition (VIT) devices for cross coupling between vertically stacked optical circuits. These device technologies are promising for three-dimensional photonic integrated circuits integrated in microelectronics chips. A record low loss of 0.6 dB cm −1 was achieved for a submicron-scale single-mode waveguide, and the VIT devices allow lowloss, broadband, and polarization-insensitive operation.

show abstract

“…By employing Dense Wavelength Division Multiplexing (DWDM), lasers of different wavelengths can be guided in the same waveguide without interfering with each other, which increases the bandwidth density. There are several waveguide technologies that offer low optical loss in the 0.272 to 0.6dB/cm range [Bogaerts and Selvaraja 2011;Cardenas et al 2009;Epping et al 2015;Selvaraja et al 2010;Takei et al 2014]. For ProLaser, we choose to employ silicon nitride (Si3N4) waveguides because they have high light confinement, offer low intrinsic optical loss in the C-band (0.4dB/cm), and can achieve superior reproducibility in a CMOS-compatible platform [Epping et al 2015].…”

Section: Laser Power Modelingmentioning

confidence: 99%

Energy-Proportional Photonic Interconnects

Demir

Hardavellas

2016

ACM Trans. Archit. Code Optim.

View full text Add to dashboard Cite

Photonic interconnects have emerged as the prime candidate technology for efficient networks on chip at future process nodes. However, the high optical loss of many nanophotonic components coupled with the low efficiency of current laser sources results in exceedingly high total power requirements for the laser. As optical interconnects stay on even during periods of system inactivity, most of this power is wasted, which has prompted research on laser gating. Unfortunately, prior work has been complicated by the long laser turn-on delays and has failed to deliver the full savings. In this article, we propose ProLaser, a laser control mechanism that monitors the requests sent on the interconnect, the cache, and the coherence directory to detect highly correlated events and turn on proactively the lasers of a photonic interconnect. While ProLaser requires fast lasers with a turn-on delay of a few nanoseconds, a technology that is still experimental, several types of such lasers that are suitable for power gating have already been manufactured over the last decade. Overall, ProLaser saves 42% to 85% of the laser power, outperforms the current state of the art by 2× on average, and closely tracks (within 2%-6%) a perfect prediction scheme with full knowledge of future interconnect requests. Moreover, the power savings of ProLaser allow the cores to exploit a higher-power budget and run faster, achieving speedups of 1.5 to 1.7× (1.6× on average). CCS Concepts: r Hardware → Photonic and optical interconnect; Emerging optical and photonic technologies; Network on chip; Interconnect power issues

show abstract

Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect

Cited by 40 publications

References 26 publications

Room-temperature-deposited dielectrics and superconductors for integrated photonics

Room-temperature-deposited dielectrics and superconductors for integrated photonics

Amorphous Silicon Photonics

Energy-Proportional Photonic Interconnects

Contact Info

Product

Resources

About