Sub-10 nm nanofabrication with the helium and neon ions in ORION NanoFab

Singh, Bipin

doi:10.1063/1.4802357

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…Recently, the first helium IBL system (ORION NanoFab from Carl Zeiss Microscopy) has become available on the market, which is able to create structures with sub-10 nm dimensions (Table 13.2.1) [15]. Recently, the first helium IBL system (ORION NanoFab from Carl Zeiss Microscopy) has become available on the market, which is able to create structures with sub-10 nm dimensions (Table 13.2.1) [15].…”

Section: Ion Beam Lithographymentioning

confidence: 99%

Two-Photon Polymerization as a Component of Desktop Integrated Manufacturing Platforms

Martínez-Chapa¹,

Salazar²,

Madou³

2016

Three-Dimensional Microfabrication Using Two-Photon Polymerization

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Section: Ion Beam Lithographymentioning

confidence: 99%

Two-Photon Polymerization as a Component of Desktop Integrated Manufacturing Platforms

Martínez-Chapa¹,

Salazar²,

Madou³

2016

Three-Dimensional Microfabrication Using Two-Photon Polymerization

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“…Assim, a técnica de ultravioleta extremo (extreme ultra violet, EUV), com comprimento de onda menor que 13,5 nm, ganhou campo nos processos de fabricação por litografia óptica e é considerada um dos processos de litografia mais promissores para lidar com o nó tecnológico abaixo de 30 nm [14]. Recentemente, estruturas com Alternativamente, processos de nanofabricação de protótipos de dispositivos podem ser realizados utilizando feixe de íons de gálio de sistemas FIB [16][17][18][19] ou feixe de elétrons de litografia por feixe de elétrons (EBL) [20,21]. A resolução da técnica FIB depende de parâmetros do sistema eletro-óptico e da fonte utilizada (gálio, hélio, neônio, silício), estando situada abaixo de 30 nm para o sistema utilizado neste trabalho e podendo alcançar o limiar de 10 nm [16].…”

Section: Nova Geração De Ferramentas Para Nano Fabricaçãounclassified

Desenvolvimento de processos de obtenção nanofios de silício para dispositivos MOS 3D utilizando feixe de íons focalizados e litografia por feixe de elétrons

Santos¹,

Diniz²

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This work presents the development for obtaining silicon nanowires (SiNW) for applications in 3D MOS devices using Focused Ion Beam with gallium ions (GaFIB) and Electron Beam Lithography (EBL) techniques. The complete fabrication process was developed for obtaining junctionless nanowire-based transistors, chosen due to the simplicity of processing and to the absence of short channel and punchthrough effects. Silicon on Insulator (SOI) wafers were used as substrate.GaFIB/SEM -a dual beam system coupled to a scanning electron microscope -, with nominal resolution for the ionic beam of 20 nm, was used to define silicon nanowires and dope them locally by gallium ions (p + -SiNW), in addition to deposit SiO 2 dielectric gate and Pt source, drain and gate electrodes. Metal electrodes and gate dielectric deposition were taken place with the electron beam available in the SEM to avoid extra ion implantation and prevent sputtering process of silicon nanowires. The dimensions obtained for the nanowire length (L Fin ) and high (H Fin ), gate length (L Gate ) and width (W Gate ) were, respectively, 6 m, 15 nm, 1 m e 35 nm. The study of the driving electric current through p + -SiNW was achieved by electrical measurements in the pseudo-MOS devices using the buried silicon dioxide (BOX) of the SOI wafer as gate dielectric to control the current through the p + -SiNW. Electrical current between source and drain (I DS ) versus gate voltage between the back-gate and source (V BGS ) curves indicate accumulation regime for the p + -SiNW. I DS versus V DS curves indicate that the JNT device operates as a gated resistor gate.Still, the EBL techniquewith nominal resolution for the electronic beam of 2 nmwas used to fabricate nMOS JNT devices -with arsenic dopant (n + -SiNW) -along with ECR-CVC (Electron Cyclotron Resonance) chemical phase deposition plasma system, for defining the nanowires using RF plasma etching and formation of the gate dielectric. Titanium and aluminum source, drain and gate electrodes were deposited by sputtering. The dimensions of width (W) and length (L), as well as the number of nanowire transistors were varied to allow a range of up to 3 orders of the electrical current magnitude through the device. The minimum dimensions obtained for the nanowire length (L Fin ) and high (H Fin ), gate length (L Gate ) and width (W Gate ) were, respectively, 10 m, 15 nm, 100 nm e 50 nm. xiiThe average time for the fabrication of one single JNT device using FIB system is 2 days, with the average cost of US$ 4,000.00. Still, the device fabrication using EBL technique is longerapproximately 10 days -, however it costs less than one order of magnitude compared to FIB

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Focused helium-ion-beam-induced deposition

Alkemade

Miro

2014

Appl. Phys. A

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Sub-10 nm nanofabrication with the helium and neon ions in ORION NanoFab

Cited by 7 publications

References 12 publications

Two-Photon Polymerization as a Component of Desktop Integrated Manufacturing Platforms

Two-Photon Polymerization as a Component of Desktop Integrated Manufacturing Platforms

Desenvolvimento de processos de obtenção nanofios de silício para dispositivos MOS 3D utilizando feixe de íons focalizados e litografia por feixe de elétrons

Focused helium-ion-beam-induced deposition

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