Sub‐micron silicon structures for thin film solar cells

Abstract

The realization of a lateral structured thin solar cell based on silicon is introduced and advantages such as increased internal electric fields, light diffraction into the bulk of the absorber, and improved light trapping are discussed. The key process for the realization of such a solar cell is the interference laser recrystallization of amorphous silicon which has been applied to produce stripe, grid, and dot arrays. The experimental set‐up of the laser recrystallization is presented, and a detailed description of electronic properties of laser recrystallized, boron doped silicon films is given.

Laser Surface Pattering of Titanium for Improving the Biological Performance of Dental Implants

“…One of the most important laser processing parameters that control the morphology of the periodic patterns is laser fluence . This effect can be observed for instance in Figure for a 10 µm spatial period.…”

“…A new method that was shown to be capable of producing surface patterns in metals in the micro and sub‐micrometer range is direct laser interference patterning (DLIP) . Compared to a direct laser writing process, DLIP allows higher processing speeds (up to 0.36 m 2 min −1 for metals), as well as resolution even in the sub‐micrometer range .…”

Realization of AlGaAs antidot arrays by pulsed laser interference gratings

“…In the case of pulsed interference processing ͑PIP͒, an intense pattern is generated by use of a pulsed Nd:YAG laser to pattern semiconductors in the submicron regime. [6][7][8] At the intensity maxima of the interference pattern, the semiconductor is heated locally, giving rise, e.g., to interdiffusion of atoms or defect generation. Local melting and even ablation can be achieved at higher pulse powers.…”

Polycrystalline Silicon Thin Films Produced by Interference Laser Crystallization of Amorphous Silicon

“…Periodic intensity profiles enable a control of the density and distribution of nucleation sites on large areas without necessity of using masks 4) and crystallization seeds can always be generated close to the intensity minima while the rest of the material is molten. Being well described in the literature [3][4][5] the interference laser crystallization will not be discussed here in detail.…”