Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

Abstract

One-dimensional (1D) SnO2 sub-wavelength waveguides are a critical contribution to advanced optoelectronics. Further understanding of the surface defects and role of morphology in 1D SnO2 nanowires can help to better utilize these nanostructures more efficiently. For this purpose, three different nanowires (NWs), namely belts, cylindrical- and square-shaped structures were grown using SnO2 quantum dots as a precursor material. The growth process of these NWs is discussed. The nanobelts were observed to grow up to 3 mm in length. Morphological and structural studies of the nanostructures were also carried out. All NWs showed waveguide behavior with visible photoluminescence (PL) upon excitation with a 325 nm laser. This behavior was also demonstrated in tapered and surface-functionalized SnO2 NWs. While the tapered waveguide can allow for easy focusing of light, the simple surface chemistry offers selective light propagation by tuning the luminescence. Defect-related PL in NWs is studied using temperature-dependent measurements and a band diagram is proposed.

Revealing Interplay of Defects in SnO2 Quantum Dots for Blue Luminescence and Selective Trace Ammonia Detection at Room Temperature

“…Tin oxide (SnO 2 ) nanostructures (NSs) have attracted immense interest in key technological applications, e.g., gas sensors, optical devices, catalysis, energy storage, and biosensors, thanks to their biocompatibility, chemical stability, and environment-friendly nature. − Their optical properties are mostly driven by defect chemistry due to the dipole-forbidden band-to-band transition. , Importantly, they may be tuned by different morphologies of NSs like zero dimensional–one dimensional (0D)–(1D), as well as by the manipulation of electronic band structures substantiated with different defects such as cationic (Sn) and anionic (O) vacancies. − Oxygen vacancies (O V ) can be created, such as in-plane oxygen vacancy (V P ) and bridging oxygen vacancy (V B ), in the SnO 2 crystal depending on the removal sites, as shown in the Supporting Information Figure S1. , The contribution of O V in photoluminescence (PL) property is meticulously studied. ,, Notably, the defect-related PL appears in the region of 1.8–2.45 eV, generally as a broad feature around 2 eV . Such O V acts as a self-doping agent and immensely influences various applications such as in gas sensors, as an adsorption site, or by altering the electronic band structure. − For instance, V P creating an energy band close to the conduction band minimum (CBM) was elucidated by the low-temperature photoluminescence (PL) investigation , and was correlated with the low-temperature CH 4 sensor operation .…”

The Effect of PVP Concentration on Particle Size, Morphological and Optical Properties of Cassiterite Nanoparticles

“…Typically, this type of material is applied to areas including gas sensors, clear electrodes, and diodes [19]- [24]. An outcome of their fascinating features and different benefits (for instance, hierarchical SnO 2 Nanostructures [25], flower-like SnO 2 nanostructures [26]- [28], One-dimensional [29], Nanosheet-assembled hierarchical [30] and 1D and surface-functionalized SnO 2 nanosized of numerous structures [31]), was that a variety of SnO 2 nanomaterials were generated through diverse procedures. These procedures include, but are not limited to, the hydrothermal method [32]- [35], the carbothermal reduction [36], the thermal evaporation [37], [38], the microwave-assisted [39], the nano casting route [40], and the spray pyrolysis technique [41].…”

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…One‐dimensional optoelectronic applications mainly utilize their NWs and nanoarray structures. In addition, MoO 3 nanobelts (NBs) and SnO 2 NBs are the same wide‐bandgap 1D semiconductors, and have been studied in the field of light detection . Among the II‐VI compounds, sulfide semiconductors are also an important part …”

“…In addition, MoO 3 nanobelts (NBs) and SnO 2 NBs are the same wide-bandgap 1D semiconductors, and have been studied in the field of light detection. [108][109][110][111] Among the II-VI compounds, sulfide semiconductors are also an important part. 65,[112][113][114][115] V-VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs.…”