Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Shareef, Iqbal

doi:10.1116/1.587830

Cited by 47 publications

(25 citation statements)

References 7 publications

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“…In these applications, the deposited layers require good conformal step coverage in order to prevent any void formation that could dramatically degrade the physical and electrical properties of the system [4], [6]. Chemical vapor deposition (CVD) processes allow the production of highly conformal silicon glass films using organosilicon precursors such as tetraethoxysilane [7]- [10]. This precursor, and generally every organosilicon compounds, indeed, provides better conformal step and trench filling compared to silane/O 2 mixtures [6], [11].…”

Section: Introductionmentioning

confidence: 99%

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Larclause

Paulmier

Enache

et al. 2009

IEEE Trans. Plasma Sci.

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In this paper, homogeneous and dense silicon-based coatings have been deposited from hexamethyldisiloxane (HMDSO: Si 2 O(CH 3 ) 6 ) on patterned silicium in a Townsend dielectric barrier discharge operating at atmospheric pressure. A brief description of the physical mechanisms ruling the step coverage is first described, followed by a description of the atmospheric pressure plasma process used. The step coverage is discussed with regard to the aspect ratio of the patterned wafers. Coatings deposited in and after the discharge region have also been characterized to understand the influence of plasma activation. In order to understand the experimental results, numerical simulations have been performed using a simplified reactive transport model. These results provide information and first general insight on the physical mechanisms ruling the conformity of silicon-based films deposited with this technique.Index Terms-Atmospheric pressure Townsend discharge (APTD), dielectric barrier discharge (DBD), glow discharges, plasma-enhanced chemical vapor deposition (PECVD), reactive transport modeling, silicon oxide, step coverage.

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Section: Introductionmentioning

confidence: 99%

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Larclause

Paulmier

Enache

et al. 2009

IEEE Trans. Plasma Sci.

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“…Figure 9c demonstrates clearly that only the inside of an anchor but not its walls are etched due to the self-alignment etching process. Ozone/TEOS oxide is used to achieve good step coverage and uniform deposition, particularly in high aspect-ratio structures [10]. Therefore, a 200 nm ozone / TEOS oxide has been deposited as passivation layer of the TSV.…”

Section: Resultsmentioning

confidence: 99%

Self-aligned through silicon vias in ultra-thin chips for 3D-integration

Ferwana

Harendt

Letzkus

et al. 2012

2012 4th Electronic System-Integration Technology Conference

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Here, we present a new concept for enabling the formation of TSVs in ultra-thin chips fabricated by using the Chipfilm TM technology. In this technology a buried cavity is created underneath a Si-membrane which is attached to the substrate by vertical silicon anchors. By applying thermal oxidation, the side walls of these anchors and the narrow cavity are passivated. Due to the high selectivity of the silicon via etching process the oxidized silicon anchors and chip backside can be exploited for creating self-aligned TSVs. Accordingly, a seamless oxide isolation at the chip backside and inside the TSVs is provided.

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“…On the process side, there are mature technologies exist for such a construction. Shallow trench isolation (STI) in microelectronics has been used to planarize the inter-layer interconnects 22,24 . Polymers, especially inorganic spin-on-glasses, were demonstrated to fill down to 200nm features 24 .…”

Section: Some Issues On Fabricationmentioning

confidence: 99%

Broadband photonics bandgap polarization mirrors

Deng

Wang

2005

Nanophotonics for Communication: Materials and Devices II

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We design broadband polarization mirrors for optical communications. The mirrors consist of multilayer subwavelength gratings that do not require lateral alignment with respect to one another. Flexible bandwidth control and wide angular response of reflectivity are demonstrated in several configurations with 2, 3, and 4 layers of gratings. Perspective applications to the polarization control of active devices in the telecommunication windows, including vertical cavity surface emitting lasers are presented.

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Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Abstract: Articles you may be interested inRole of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition J.

Cited by 47 publications

References 7 publications

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Self-aligned through silicon vias in ultra-thin chips for 3D-integration

Broadband photonics bandgap polarization mirrors

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